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ES1A,JD,Superfast Recovery Rectifier

ES1A

Superfast Recovery Rectifier ,ES1A ,VR:50V ,IF:1A ,VF:1V ,35ns ,SMA(DO-214AC)

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The image is for reference only, please refer to the drawing for details

Data Sheet： ES1A-ES1J-SMA.pdf

Product number：	DF-UES1A50V01A02603517JD
Manufacturer Product Number：	ES1A
Manufacturer ：	JD
Series ：	JD-Superfast Recovery Rectifiers
Product Type ：	Superfast Recovery Rectifier
Size Code ：	50V
Resistance ：	1A
Error Range ：	1V
TCR(PPM_ ：	35ns
Power ：	SMA/DO-214AC
Description：	Superfast Recovery Rectifier ,ES1A ,VR:50V ,IF:1A ,VF:1V ,35ns ,SMA(DO-214AC)

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	JD
Product Series	JD-Superfast Recovery Rectifiers
Product Type	Superfast Recovery Rectifier
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

File

File Type	File Name
Data Sheet	ES1A-ES1J-SMA.pdf

Lead time： Estimated delivery date 2026-06-15

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Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

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Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

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