SS34_JD_Schottky Diodes_40V_3A_Parameters_ Price_ Spot inventory_ Series Category

Attribute Name	Attribute Value
Manufacturer	JD
Product Series	JD-Schottky Diodes
Product Type	Schottky Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	JDSMA_SS32_SS320_3A.pdf

Lead time： Estimated delivery date when out of stock 2024-12-24

Quantity

Unit Price

$0.037529

$0.030492

100

$0.025801

300

$0.022283

Quantity

Unit Price

1000

$0.018764

5000

$0.015246

Online Inquiry

* Order quantity ：

MPQ：5000

MOQ： 5000

MOQ：5

When the purchase quantity is less than the inventory, you can purchase directly, the purchase quantity is: N * MOQ
When the purchase quantity is greater than the inventory, you need to order; when ordering, the purchase quantity is: N * MPQ

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Count

Lead time： {{ (product.stock > 0 && product.num <= product.stock) ? 'In stock': 'Estimated delivery date ' + product.leadDate }}

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Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

Product number：	DK-K00140V03A0005AA17JD
Manufacturer Product Number：	SS34
Manufacturer ：	JD
Series ：	JD-Schottky Diodes
Product Type ：	Schottky Diodes
Voltage(VR) ：	40V
Current (IO) ：	3A
Forward Voltage(VF) ：	0.55V
Power dissipation(Pd）：	-
Packge ：	SMA
Description：	Schottky Diodes ,SS34 ,40V ,3A ,0.55V ,- ,SMA

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