SS36_JD_Schottky Diodes_60V_3A_Parameters_ Price_ Spot inventory_ Series Category

Attribute Name	Attribute Value
Manufacturer	JD
Product Series	JD-Schottky Diodes
Product Type	Schottky Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	JDSMA_SS32_SS320_3A.pdf

Lead time： Estimated delivery date 2025-02-24

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MA729

Schottky Diodes ,MA729 ,VR:30V ,IO:200mA ,VF:0.55V ,PD:200mW ,SOD-323

$0.000000 More
RB160M-30

Schottky Diodes ,RB160M-30 ,VR:30V ,IO:1000mA ,VF:0.48V ,PD:450mW ,SOD-123

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BAS40

Schottky Diodes ,BAS40 ,VR:40V ,IO:200mA ,VF:1V ,PD:225mW ,SOT-23

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RB706F-40

Schottky Diodes ,RB706F-40 ,VR:40V ,IO:30mA ,VF:0.37V ,PD:200mW ,SOT-323

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CMPSH-3

Schottky Diodes ,CMPSH-3 ,VR:30V ,IO:100mA ,VF:1V ,PD:350mW ,SOT-23

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MBRX0560

Schottky Diodes ,MBRX0560 ,VR:60V ,IO:500mA ,VF:0.7V ,PD:250mW ,SOD-323

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BAR43S

Schottky Diodes ,BAR43S ,VR:30V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-23

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SS110

Schottky Diodes ,SS110 ,VR:100V ,IO:1000mA ,VF:0.85V ,- ,SMA

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BAS70-04

Schottky Diodes ,BAS70-04 ,VR:70V ,IO:70mA ,VF:1V ,PD:200mW ,SOT-23

$0.000000 More
B0530W

Schottky Diodes ,B0530W ,VR:30V ,IO:500mA ,VF:0.43V ,PD:410mW ,SOD-123

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RB501V-40

Schottky Diodes ,RB501V-40 ,VR:40V ,IO:100mA ,VF:0.55V ,PD:200mW ,SOD-323

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RB400D

Schottky Diodes ,RB400D ,VR:40V ,IO:500mA ,VF:0.5V ,PD:250mW ,SOT-23

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BAT54ADW

Schottky Diodes ,BAT54ADW ,VR:30V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-363

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SS38

Schottky Diodes ,SS38 ,VR:80V ,IO:3A ,VF:0.7V ,- ,SMA

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BAT54BRW

Schottky Diodes ,BAT54BRW ,VR:30V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-363

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1SS389

Schottky Diodes ,1SS389 ,VR:10V ,IO:100mA ,VF:0.5V ,PD:150mW ,SOD-523

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1SS401

Schottky Diodes ,1SS401 ,VR:20V ,IO:300mA ,VF:0.45V ,PD:100mW ,SOT-323

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RB425D

Schottky Diodes ,RB425D ,VR:40V ,IO:100mA ,VF:0.55V ,PD:250mW ,SOT-23

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SD101BW

Schottky Diodes ,SD101BW ,VR:50V ,- ,VF:0.95V ,PD:400mW ,SOD-123

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RB481K

Schottky Diodes ,RB481K ,VR:30V ,IO:200mA ,VF:0.5V ,PD:150mW ,SOT-353

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Product Recommendation Maker Dynamics Applications

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

Product number：	DK-K00460V03A0019AA17JD
Manufacturer Product Number：	SS36
Manufacturer ：	JD
Series ：	JD-Schottky Diodes
Product Type ：	Schottky Diodes
Voltage(VR) ：	60V
Current (IO) ：	3A
Forward Voltage(VF) ：	0.7V
Power dissipation(Pd）：	-
Packge ：	SMA
Description：	Schottky Diodes ,SS36 ,VR:60V ,IO:3A ,VF:0.7V ,- ,SMA

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