SS315_JD_Schottky Diodes_150V_3A_Parameters_ Price_ Spot inventory_ Series Category

Attribute Name	Attribute Value
Manufacturer	JD
Product Series	JD-Schottky Diodes
Product Type	Schottky Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	JDSMA_SS32_SS320_3A.pdf

Lead time： Estimated delivery date 2025-02-24

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SD103CWS

Schottky Diodes ,SD103CWS ,VR:20V ,- ,VF:0.6V ,PD:200mW ,SOD-323

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BAS70DW-05

Schottky Diodes ,BAS70DW-05 ,VR:70V ,IO:70mA ,VF:1V ,PD:200mW ,SOT-363

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B5817W

Schottky Diodes ,B5817W ,VR:20V ,IO:1000mA ,VF:0.75V ,PD:450mW ,SOD-123

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SS36

Schottky Diodes ,SS36 ,VR:60V ,IO:3A ,VF:0.7V ,- ,SMA

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MBRX0530

Schottky Diodes ,MBRX0530 ,VR:30V ,IO:500mA ,VF:0.55V ,PD:250mW ,SOD-323

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BAS70-05

Schottky Diodes ,BAS70-05 ,VR:70V ,IO:70mA ,VF:1V ,PD:200mW ,SOT-23

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BAT54TW

Schottky Diodes ,BAT54TW ,VR:30V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-363

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DS715NND03

Schottky Diodes ,DS715NND03 ,VR:30V ,IO:30mA ,VF:0.37V ,PD:150mW ,WBFBP-03B

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BAT54V

Schottky Diodes ,BAT54V ,VR:30V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-563

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BAT54T

Schottky Diodes ,BAT54T ,VR:30V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-523

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BAS70DW-06

Schottky Diodes ,BAS70DW-06 ,VR:70V ,IO:70mA ,VF:1V ,PD:200mW ,SOT-363

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RB731XN

Schottky Diodes ,RB731XN ,VR:40V ,IO:30mA ,VF:0.37V ,PD:200mW ,SOT-363

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BAT54W

Schottky Diodes ,BAT54W ,VR:30V ,- ,VF:1V ,PD:250mW ,SOD-123

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BAV23C

Schottky Diodes ,BAV23C ,VR:250V ,IO:100mA ,VF:1.25V ,PD:350mW ,SOT-23

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BAS40V

Schottky Diodes ,BAS40V ,VR:40V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-563

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B0520LW

Schottky Diodes ,B0520LW ,VR:20V ,IO:500mA ,VF:0.385V ,PD:410mW ,SOD-123

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RB715W

Schottky Diodes ,RB715W ,VR:40V ,IO:30mA ,VF:0.37V ,PD:150mW ,SOT-523

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B5817WS

Schottky Diodes ,B5817WS ,VR:20V ,IO:1000mA ,VF:0.75V ,PD:200mW ,SOD-323

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BAT54WS

Schottky Diodes ,BAT54WS ,VR:30V ,IO:100mA ,VF:1V ,PD:200mW ,SOD-323

$0.000000 More
SD103AW

Schottky Diodes ,SD103AW ,VR:40V ,- ,VF:0.6V ,PD:400mW ,SOD-123

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Product Recommendation Maker Dynamics Applications

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

Product number：	DK-K009150V3A0040AA17JD
Manufacturer Product Number：	SS315
Manufacturer ：	JD
Series ：	JD-Schottky Diodes
Product Type ：	Schottky Diodes
Voltage(VR) ：	150V
Current (IO) ：	3A
Forward Voltage(VF) ：	0.95V
Power dissipation(Pd）：	-
Packge ：	SMA
Description：	Schottky Diodes ,SS315 ,VR:150V ,IO:3A ,VF:0.95V ,- ,SMA

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