HNST WELCOME！ 0755-23173910

English |中文

{{searchSelectTypeText}}

Search

fuse Alloy resistance Precision resistor walter ever ohms current diverter SMD fuse

Cart {{cartCount}}

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

SS320,JD,Schottky Diodes

SS320

Schottky Diodes ,SS320 ,VR:200V ,IO:3A ,VF:0.95V ,- ,SMA

✖

The image is for reference only, please refer to the drawing for details

Data Sheet： JDSMA_SS32_SS320_3A.pdf

Product number：	DK-K010200V3A0040AA17JD
Manufacturer Product Number：	SS320
Manufacturer ：	JD
Series ：	JD-Schottky Diodes
Product Type ：	Schottky Diodes
Voltage(VR) ：	200V
Current (IO) ：	3A
Forward Voltage(VF) ：	0.95V
Packge ：	SMA/DO-214AC
Description：	Schottky Diodes ,SS320 ,VR:200V ,IO:3A ,VF:0.95V ,- ,SMA

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	JD
Product Series	JD-Schottky Diodes
Product Type	Schottky Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

File

File Type	File Name
Data Sheet	JDSMA_SS32_SS320_3A.pdf

Lead time： Estimated delivery date 2026-05-10

Quantity

Unit Price

5

$0.060582

20

$0.049223

100

$0.041650

300

$0.035970

Quantity

Unit Price

1000

$0.030291

5000

$0.024611

* Order quantity ：

MPQ：5000

MOQ： 5000

MOQ：5

When the purchase quantity is less than the inventory, you can purchase directly, the purchase quantity is: N * MOQ
When the purchase quantity is greater than the inventory, you need to order; when ordering, the purchase quantity is: N * MPQ

Order quantity

Unit Price

Count

{{product.num}}

{{ isCn?'￥':'$'}}{{ isCn?product.price:product.usdPrice}}

{{isCn?'￥':'$'}}{{ isCn?product.subTotal:product.usdSubTotal}}

{{isCn?'￥':'$'}}{{ isCn?product.subTotal:product.usdSubTotal}}

Lead time： {{ (product.stock > 0 && product.num <= product.stock) ? 'In stock': 'Estimated delivery date ' + product.leadDate }}

Add to cart Buy it now

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

Silicon carbide (SiC) diodes are diodes made from silicon carbide as raw material. Silicon carbide diode, claimed to have zero reverse recovery time, is a dedicated boost diode for high-efficiency PFC boost circuits.

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

Product Recommendation Maker Dynamics Applications

Product number： {{currentProduct.code}}

Product information： {{currentProduct.descCn}}

Order quantity： {{currentProduct.num}}

Cart （{{myCartItems.length}}Item）

Total amount：

{{isCn?'￥':'$'}}{{cartProductTotal}}