1SS372_CJ_Schottky Diodes_10V_100mA_Parameters_ Price_ Spot inventory_ Series Category

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Schottky Diodes
Product Type	Schottky Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	1SS372_SOT-323.pdf

Lead time： Estimated delivery date 2024-12-26

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DSS70LED02

Schottky Diodes ,DSS70LED02 ,VR:70V ,- ,VF:1V ,PD:250mW ,WBFBP-02C

$0.000000 More
1SS404

Schottky Diodes ,1SS404 ,VR:20V ,IO:300mA ,VF:0.45V ,PD:200mW ,SOD-323

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B0530WS

Schottky Diodes ,B0530WS ,VR:30V ,IO:500mA ,VF:0.45V ,PD:200mW ,SOD-323

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SD103AW

Schottky Diodes ,SD103AW ,VR:40V ,- ,VF:0.6V ,PD:400mW ,SOD-123

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BAT42WS

Schottky Diodes ,BAT42WS ,VR:30V ,- ,VF:0.65V ,PD:200mW ,SOD-323

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DS521-30LED02

Schottky Diodes ,DS521-30LED02 ,VR:30V ,IO:100mA ,VF:0.35V ,PD:100mW ,WBFBP-02C

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RB501V-40

Schottky Diodes ,RB501V-40 ,VR:40V ,IO:100mA ,VF:0.55V ,PD:200mW ,SOD-323

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BAT54AW

Schottky Diodes ,BAT54AW ,VR:30V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-323

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RB521CS-30

Schottky Diodes ,RB521CS-30 ,VR:30V ,IO:100mA ,VF:0.5V ,PD:100mW ,SOD-923

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MA729

Schottky Diodes ,MA729 ,VR:30V ,IO:200mA ,VF:0.55V ,PD:200mW ,SOD-323

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B5818W

Schottky Diodes ,B5818W ,VR:30V ,IO:1000mA ,VF:0.875V ,PD:450mW ,SOD-123

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BAS70W-05

Schottky Diodes ,BAS70W-05 ,VR:70V ,IO:70mA ,VF:1V ,PD:200mW ,SOT-323

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B5819LW

Schottky Diodes ,B5819LW ,VR:40V ,IO:1000mA ,VF:1.1V ,PD:350mW ,SOD-123

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B16WS

Schottky Diodes ,B16WS ,VR:60V ,IO:1000mA ,VF:0.7V ,PD:200mW ,SOD-323

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BAT54CT

Schottky Diodes ,BAT54CT ,VR:30V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-523

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B0530W

Schottky Diodes ,B0530W ,VR:30V ,IO:500mA ,VF:0.43V ,PD:410mW ,SOD-123

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RB400D

Schottky Diodes ,RB400D ,VR:40V ,IO:500mA ,VF:0.5V ,PD:250mW ,SOT-23

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DS54LED02

Schottky Diodes ,DS54LED02 ,VR:30V ,IO:100mA ,VF:1V ,PD:200mW ,WBFBP-02C

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RB491D

Schottky Diodes ,RB491D ,VR:20V ,- ,VF:0.47V ,PD:200mW ,SOT-23

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DS520-30LED02

Schottky Diodes ,DS520-30LED02 ,VR:30V ,IO:100mA ,VF:0.45V ,PD:100mW ,WBFBP-02C

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Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

Product number：	DK-K10110V0A100120307CJ
Manufacturer Product Number：	1SS372
Manufacturer ：	CJ
Series ：	CJ-Schottky Diodes
Product Type ：	Schottky Diodes
Voltage(VR) ：	10V
Current (IO) ：	100mA
Forward Voltage(VF) ：	0.5V
Power dissipation(Pd）：	100mW
Packge ：	SOT-323
Description：	Schottky Diodes ,1SS372 ,VR:10V ,IO:100mA ,VF:0.5V ,PD:100mW ,SOT-323

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