1SS388_CJ_Schottky Diodes_40V_100mA_Parameters_ Price_ Spot inventory_ Series Category

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Schottky Diodes
Product Type	Schottky Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Attribute Name

Attribute Value

Manufacturer

Product Series

CJ-Schottky Diodes

Product Type

Schottky Diodes

EU RoHS

Compliant(2011/65/EU)

EU REACH

Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	1SS388_SOD-523.pdf

File Type

File Name

Data Sheet

1SS388_SOD-523.pdf

Lead time： Estimated delivery date 2025-05-06

Quantity

Unit Price

$0.037529

$0.030492

100

$0.025801

300

$0.022283

Quantity

Unit Price

3000

$0.015832

12000

$0.015246

Online Inquiry

* Order quantity ：

MPQ：8000

MOQ： 8000

Product Recommendation Maker Dynamics Applications

BAT54AW

Schottky Diodes ,BAT54AW ,VR:30V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-323

$0.000000 More
RB706F-40

Schottky Diodes ,RB706F-40 ,VR:40V ,IO:30mA ,VF:0.37V ,PD:200mW ,SOT-323

$0.000000 More
BAR43

Schottky Diodes ,BAR43 ,VR:30V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-23

$0.000000 More
SD103CWS

Schottky Diodes ,SD103CWS ,VR:20V ,- ,VF:0.6V ,PD:200mW ,SOD-323

$0.000000 More
RB480V

Schottky Diodes ,RB480V ,VR:40V ,IO:100mA ,VF:0.6V ,PD:150mW ,SOT-553

$0.000000 More
B5817LW

Schottky Diodes ,B5817LW ,VR:20V ,IO:1000mA ,VF:0.8V ,PD:350mW ,SOD-123

$0.000000 More
MBRX0530

Schottky Diodes ,MBRX0530 ,VR:30V ,IO:500mA ,VF:0.55V ,PD:250mW ,SOD-323

$0.000000 More

Product Recommendation Maker Dynamics Applications

Calculation method and formula for MOS transistor losses The losses of MOS transistors can be estimated by calculating their current losses and power losses. Current loss refers to the loss caused by the passage of current inside a MOS transistor, which is due to the resistance loss between electrons and the silicon substrate when passing through the MOS transistor. This loss can be calculated using the following formula:

Circuit symbols for silicon carbide (SIC) MOSFETs The circuit symbol of silicon carbide (SiC) MOSFET is similar to that of traditional silicon MOSFET, except that some special markings are added to the symbol to indicate its characteristics.

Why is the development of high-voltage SiC MOSFET devices slow High voltage SiC MOSFET devices have many advantages, such as low on resistance, high temperature performance, and high-frequency characteristics, and therefore have broad prospects in some applications, such as electric vehicles, power electronic converters, and solar inverters. However, the development of these devices has been relatively slow, possibly due to the following reasons:

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Silicon carbide MOSFET modules have significant advantages in the application of high-power power systems such as photovoltaics, wind power, electric vehicles, and rail transit. The advantages of high voltage, high frequency, and high efficiency of silicon carbide devices can break through the limitations of existing electric vehicle motor designs due to device performance, which is currently the focus of research and development in the field of electric vehicle motors at home and abroad.

Product number：	DK-K10240V0A100130110CJ
Manufacturer Product Number：	1SS388
Manufacturer ：	CJ
Series ：	CJ-Schottky Diodes
Product Type ：	Schottky Diodes
Voltage(VR) ：	40V
Current (IO) ：	100mA
Forward Voltage(VF) ：	0.6V
Power dissipation(Pd）：	150mW
Packge ：	SOT-523
Description：	Schottky Diodes ,1SS388 ,VR:40V ,IO:100mA ,VF:0.6V ,PD:150mW ,SOT-523

1SS388,CJ,Schottky Diodes

1SS388

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

1SS388,CJ,Schottky Diodes

1SS388

File

Related Series