B5817W_CJ_Schottky Diodes_20V_1000mA_Parameters_ Price_ Spot inventory_ Series Category

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Schottky Diodes
Product Type	Schottky Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	B5817_B5819W_SOD-123.pdf

Lead time： Estimated delivery date 2025-02-24

Online Inquiry

Product Recommendation Maker Dynamics Applications

BAS70-04

Schottky Diodes ,BAS70-04 ,VR:70V ,IO:70mA ,VF:1V ,PD:200mW ,SOT-23

$0.000000 More
RB751G-40

Schottky Diodes ,RB751G-40 ,VR:40V ,IO:30mA ,VF:0.37V ,PD:150mW ,SOD-723

$0.000000 More
DS160-40THD02

Schottky Diodes ,DS160-40THD02 ,VR:40V ,IO:1000mA ,VF:0.55V ,PD:150mW ,WBFBP-02L

$0.000000 More
BAS40-05

Schottky Diodes ,BAS40-05 ,VR:40V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-23

$0.000000 More
B16WS

Schottky Diodes ,B16WS ,VR:60V ,IO:1000mA ,VF:0.7V ,PD:200mW ,SOD-323

$0.000000 More
BAS40-06T

Schottky Diodes ,BAS40-06T ,VR:40V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-523

$0.000000 More
BAV23C

Schottky Diodes ,BAV23C ,VR:250V ,IO:100mA ,VF:1.25V ,PD:350mW ,SOT-23

$0.000000 More
RB715F

Schottky Diodes ,RB715F ,VR:40V ,IO:30mA ,VF:0.37V ,PD:200mW ,SOT-323

$0.000000 More
SS312

Schottky Diodes ,SS312 ,VR:120V ,IO:3A ,VF:0.85V ,- ,SMA

$0.000000 More
BAS40W-04

Schottky Diodes ,BAS40W-04 ,VR:40V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-323

$0.000000 More
BAT43W

Schottky Diodes ,BAT43W ,VR:30V ,- ,VF:0.45V ,PD:200mW ,SOD-123

$0.000000 More
BAS70-05T

Schottky Diodes ,BAS70-05T ,VR:70V ,IO:70mA ,VF:1V ,PD:150mW ,SOT-523

$0.000000 More
1SS389

Schottky Diodes ,1SS389 ,VR:10V ,IO:100mA ,VF:0.5V ,PD:150mW ,SOD-523

$0.000000 More
RB751CS-40

Schottky Diodes ,RB751CS-40 ,VR:40V ,IO:30mA ,VF:0.37V ,PD:100mW ,SOD-923

$0.000000 More
BAT64-06

Schottky Diodes ,BAT64-06 ,VR:40V ,IO:250mA ,VF:0.75V ,PD:250mW ,SOT-23

$0.000000 More
SS315

Schottky Diodes ,SS315 ,VR:150V ,IO:3A ,VF:0.95V ,- ,SMA

$0.000000 More
SD101AW

Schottky Diodes ,SD101AW ,VR:60V ,- ,VF:1V ,PD:400mW ,SOD-123

$0.000000 More
RB400D

Schottky Diodes ,RB400D ,VR:40V ,IO:500mA ,VF:0.5V ,PD:250mW ,SOT-23

$0.000000 More
RB480K

Schottky Diodes ,RB480K ,VR:40V ,IO:100mA ,VF:0.6V ,PD:150mW ,SOT-353

$0.000000 More
BAR43

Schottky Diodes ,BAR43 ,VR:30V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-23

$0.000000 More

Product Recommendation Maker Dynamics Applications

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

Silicon carbide (SiC) diodes are diodes made from silicon carbide as raw material. Silicon carbide diode, claimed to have zero reverse recovery time, is a dedicated boost diode for high-efficiency PFC boost circuits.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Product number：	DK-K11420V01A00211004CJ
Manufacturer Product Number：	B5817W
Manufacturer ：	CJ
Series ：	CJ-Schottky Diodes
Product Type ：	Schottky Diodes
Voltage(VR) ：	20V
Current (IO) ：	1000mA
Forward Voltage(VF) ：	0.75V
Power dissipation(Pd）：	450mW
Packge ：	SOD-123
Description：	Schottky Diodes ,B5817W ,VR:20V ,IO:1000mA ,VF:0.75V ,PD:450mW ,SOD-123

B5817W,CJ,Schottky Diodes

B5817W

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

B5817W,CJ,Schottky Diodes

B5817W

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications