B5819LW_CJ_Schottky Diodes_40V_1000mA_Parameters_ Price_ Spot inventory_ Series Category

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Schottky Diodes
Product Type	Schottky Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2025-04-07

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BAS40-04

Schottky Diodes ,BAS40-04 ,VR:40V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-23

$0.000000 More
BAS70-04T

Schottky Diodes ,BAS70-04T ,VR:70V ,IO:70mA ,VF:1V ,PD:150mW ,SOT-523

$0.000000 More
BAS70W-05

Schottky Diodes ,BAS70W-05 ,VR:70V ,IO:70mA ,VF:1V ,PD:200mW ,SOT-323

$0.000000 More
1SS372

Schottky Diodes ,1SS372 ,VR:10V ,IO:100mA ,VF:0.5V ,PD:100mW ,SOT-323

$0.000000 More
B0530W

Schottky Diodes ,B0530W ,VR:30V ,IO:500mA ,VF:0.43V ,PD:410mW ,SOD-123

$0.000000 More
RB551V-40

Schottky Diodes ,RB551V-40 ,VR:40V ,IO:500mA ,VF:0.47V ,PD:200mW ,SOD-323

$0.000000 More
DS520-30LED02

Schottky Diodes ,DS520-30LED02 ,VR:30V ,IO:100mA ,VF:0.45V ,PD:100mW ,WBFBP-02C

$0.000000 More
SD103ATW

Schottky Diodes ,SD103ATW ,VR:40V ,IO:175mA ,VF:0.5V ,PD:200mW ,SOT-363

$0.000000 More
BAS70-04

Schottky Diodes ,BAS70-04 ,VR:70V ,IO:70mA ,VF:1V ,PD:200mW ,SOT-23

$0.000000 More
RB751CS-40

Schottky Diodes ,RB751CS-40 ,VR:40V ,IO:30mA ,VF:0.37V ,PD:100mW ,SOD-923

$0.000000 More
SD101AWS

Schottky Diodes ,SD101AWS ,VR:60V ,- ,VF:1V ,PD:200mW ,SOD-323

$0.000000 More
RB706F-40

Schottky Diodes ,RB706F-40 ,VR:40V ,IO:30mA ,VF:0.37V ,PD:200mW ,SOT-323

$0.000000 More
BAS40W-04

Schottky Diodes ,BAS40W-04 ,VR:40V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-323

$0.000000 More
RB751S-40

Schottky Diodes ,RB751S-40 ,VR:40V ,IO:30mA ,VF:0.37V ,PD:150mW ,SOD-523

$0.000000 More
B5817LW

Schottky Diodes ,B5817LW ,VR:20V ,IO:1000mA ,VF:0.8V ,PD:350mW ,SOD-123

$0.000000 More
RB480K

Schottky Diodes ,RB480K ,VR:40V ,IO:100mA ,VF:0.6V ,PD:150mW ,SOT-353

$0.000000 More
BAT54CDW

Schottky Diodes ,BAT54CDW ,VR:30V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-363

$0.000000 More
BAT54ST

Schottky Diodes ,BAT54ST ,VR:30V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-523

$0.000000 More
BAT64-04

Schottky Diodes ,BAT64-04 ,VR:40V ,IO:250mA ,VF:0.75V ,PD:250mW ,SOT-23

$0.000000 More
MBRX0540

Schottky Diodes ,MBRX0540 ,VR:40V ,IO:500mA ,VF:0.55V ,PD:250mW ,SOD-323

$0.000000 More

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The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

Silicon carbide (SiC) diodes are diodes made from silicon carbide as raw material. Silicon carbide diode, claimed to have zero reverse recovery time, is a dedicated boost diode for high-efficiency PFC boost circuits.

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

Product number：	DK-K11940V01A00240604CJ
Manufacturer Product Number：	B5819LW
Manufacturer ：	CJ
Series ：	CJ-Schottky Diodes
Product Type ：	Schottky Diodes
Voltage(VR) ：	40V
Current (IO) ：	1000mA
Forward Voltage(VF) ：	1.1V
Power dissipation(Pd）：	350mW
Packge ：	SOD-123
Description：	Schottky Diodes ,B5819LW ,VR:40V ,IO:1000mA ,VF:1.1V ,PD:350mW ,SOD-123

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