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B5819W,CJ,Schottky Diodes

B5819W

Schottky Diodes ,B5819W ,VR:40V ,IO:1000mA ,VF:0.9V ,PD:450mW ,SOD-123

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The image is for reference only, please refer to the drawing for details

Product number：	DK-K11940V01A00251004CJ
Manufacturer Product Number：	B5819W
Manufacturer ：	CJ
Series ：	CJ-Schottky Diodes
Product Type ：	Schottky Diodes
Voltage(VR) ：	40V
Current (IO) ：	1000mA
Forward Voltage(VF) ：	0.9V
Power dissipation(Pd）：	450mW
Packge ：	SOD-123
Description：	Schottky Diodes ,B5819W ,VR:40V ,IO:1000mA ,VF:0.9V ,PD:450mW ,SOD-123

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Schottky Diodes
Product Type	Schottky Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

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Lead time： Estimated delivery date 2026-08-03

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5

$0.040209

20

$0.032670

100

$0.027644

300

$0.023874

Quantity

Unit Price

3000

$0.016963

12000

$0.016335

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MPQ：3000

MOQ： 3000

MOQ：5

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Product Recommendation Maker Dynamics Applications

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What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

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