B5819W_CJ_Schottky Diodes_40V_1000mA_Parameters_ Price_ Spot inventory_ Series Category

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Schottky Diodes
Product Type	Schottky Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2024-12-24

Quantity

Unit Price

$0.040209

$0.032670

100

$0.027644

300

$0.023874

Quantity

Unit Price

3000

$0.016963

12000

$0.016335

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MPQ：3000

MOQ： 3000

MOQ：5

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When the purchase quantity is greater than the inventory, you need to order; when ordering, the purchase quantity is: N * MPQ

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Product Recommendation Maker Dynamics Applications

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Product number：	DK-K11940V01A00251004CJ
Manufacturer Product Number：	B5819W
Manufacturer ：	CJ
Series ：	CJ-Schottky Diodes
Product Type ：	Schottky Diodes
Voltage(VR) ：	40V
Current (IO) ：	1000mA
Forward Voltage(VF) ：	0.9V
Power dissipation(Pd）：	450mW
Packge ：	SOD-123
Description：	Schottky Diodes ,B5819W ,VR:40V ,IO:1000mA ,VF:0.9V ,PD:450mW ,SOD-123

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