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BAS40-06T,CJ,Schottky Diodes

BAS40-06T

Schottky Diodes ,BAS40-06T ,VR:40V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-523

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The image is for reference only, please refer to the drawing for details

Data Sheet： BAS40T_SOT-523

Product number：	DK-K13240V0A200260110CJ
Manufacturer Product Number：	BAS40-06T
Manufacturer ：	CJ
Series ：	CJ-Schottky Diodes
Product Type ：	Schottky Diodes
Voltage(VR) ：	40V
Current (IO) ：	200mA
Forward Voltage(VF) ：	1V
Power dissipation(Pd）：	150mW
Packge ：	SOT-523
Description：	Schottky Diodes ,BAS40-06T ,VR:40V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-523

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Schottky Diodes
Product Type	Schottky Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

BAS40-04T

Schottky Diodes ,BAS40-04T ,VR:40V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-523

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BAS40-05T

Schottky Diodes ,BAS40-05T ,VR:40V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-523

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BAS40T

Schottky Diodes ,BAS40T ,VR:40V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-523

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File

File Type	File Name
Data Sheet	BAS40T_SOT-523

Lead time： Estimated delivery date 2026-08-24

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SiC MOSFET module is a power semiconductor device made of a new material, silicon carbide (SiC), which outperforms mainstream silicon (Si) IGBT and MOSFET devices in high-speed switching performance and high-temperature environments. In industrial equipment applications that require higher rated voltage and larger current capacity, SiC MOSFET modules can meet the application needs, including inverters, converters, and photovoltaic inverters for rail cars, achieving low loss and miniaturization of the system.

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