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BAS40W-06,CJ,Schottky Diodes

BAS40W-06

Schottky Diodes ,BAS40W-06 ,VR:40V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-323

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The image is for reference only, please refer to the drawing for details

Data Sheet： BAS40W_SOT-323

Product number：	DK-K13840V0A200260107CJ
Manufacturer Product Number：	BAS40W-06
Manufacturer ：	CJ
Series ：	CJ-Schottky Diodes
Product Type ：	Schottky Diodes
Voltage(VR) ：	40V
Current (IO) ：	200mA
Forward Voltage(VF) ：	1V
Power dissipation(Pd）：	150mW
Packge ：	SOT-323
Description：	Schottky Diodes ,BAS40W-06 ,VR:40V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-323

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Schottky Diodes
Product Type	Schottky Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File

File Type	File Name
Data Sheet	BAS40W_SOT-323

Lead time： Estimated delivery date 2025-05-05

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Combination of Silicon Carbide (SiC) Power Management Solutions Silicon carbide solutions support the replacement of aircraft's pneumatic and hydraulic systems with smaller, lighter, and more efficient electrical solutions to power onboard AC generators, actuators, and auxiliary power units (APU). This type of solution can also reduce the maintenance requirements of these systems. However, the most significant contribution of SiC technology lies in its mission to electrify commercial transport vehicles, which are one of the world's largest sources of GHG emissions. With the advent of 1700V metal oxide semiconductor field-effect transistors (MOSFETs) and configurable digital gate drive technology, today's SiC solutions enable designers to generate maximum productivity with minimal energy consumption for these systems.

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

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