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BAS70-05,CJ,Schottky Diodes

BAS70-05

Schottky Diodes ,BAS70-05 ,VR:70V ,IO:70mA ,VF:1V ,PD:200mW ,SOT-23

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The image is for reference only, please refer to the drawing for details

Data Sheet： BAS70_SOT-23

Product number：	DK-K14370V0A070260202CJ
Manufacturer Product Number：	BAS70-05
Manufacturer ：	CJ
Series ：	CJ-Schottky Diodes
Product Type ：	Schottky Diodes
Voltage(VR) ：	70V
Current (IO) ：	70mA
Forward Voltage(VF) ：	1V
Power dissipation(Pd）：	200mW
Packge ：	SOT-23
Description：	Schottky Diodes ,BAS70-05 ,VR:70V ,IO:70mA ,VF:1V ,PD:200mW ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Schottky Diodes
Product Type	Schottky Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

BAS70

Schottky Diodes ,BAS70 ,VR:70V ,IO:70mA ,VF:1V ,PD:200mW ,SOT-23

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BAS70-04

Schottky Diodes ,BAS70-04 ,VR:70V ,IO:70mA ,VF:1V ,PD:200mW ,SOT-23

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BAS70-06

Schottky Diodes ,BAS70-06 ,VR:70V ,IO:70mA ,VF:1V ,PD:200mW ,SOT-23

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File

File Type	File Name
Data Sheet	BAS70_SOT-23

Lead time： Estimated delivery date 2026-08-24

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What are the differences between gallium nitride (GaN) and silicon carbide (SiC)? Gallium nitride (GaN) and silicon carbide (SiC) power transistors, two types of compound semiconductor devices, have emerged as solutions. These devices compete with long-life silicon power lateral diffusion metal oxide semiconductor (LDMOS) MOSFETs and super junction MOSFETs. GaN and SiC devices are similar in some aspects, but there are also significant differences.

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