BAT42WS_CJ_Schottky Diodes_30V__Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Schottky Diodes
Product Type	Schottky Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	BAT42WS_SOD-323

Lead time： Estimated delivery date 2026-04-29

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BAT43W

Schottky Diodes ,BAT43W ,VR:30V ,- ,VF:0.45V ,PD:200mW ,SOD-123

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Schottky Diodes ,B5818LW ,VR:30V ,IO:1000mA ,VF:0.95V ,PD:350mW ,SOD-123

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SD107WS

Schottky Diodes ,SD107WS ,VR:30V ,- ,VF:0.8V ,PD:250mW ,SOD-323

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RB715W

Schottky Diodes ,RB715W ,VR:40V ,IO:30mA ,VF:0.37V ,PD:150mW ,SOT-523

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RB400D

Schottky Diodes ,RB400D ,VR:40V ,IO:500mA ,VF:0.5V ,PD:250mW ,SOT-23

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MBRX0540

Schottky Diodes ,MBRX0540 ,VR:40V ,IO:500mA ,VF:0.55V ,PD:250mW ,SOD-323

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BAT54DW

Schottky Diodes ,BAT54DW ,VR:30V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-363

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BAT43WS

Schottky Diodes ,BAT43WS ,VR:30V ,- ,VF:0.45V ,PD:200mW ,SOD-323

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RB461F

Schottky Diodes ,RB461F ,VR:20V ,IO:700mA ,VF:0.49V ,PD:150mW ,SOT-323

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BAS70-06T

Schottky Diodes ,BAS70-06T ,VR:70V ,IO:70mA ,VF:1V ,PD:150mW ,SOT-523

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BAT54W

Schottky Diodes ,BAT54W ,VR:30V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-323

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RB521G-30

Schottky Diodes ,RB521G-30 ,VR:30V ,IO:100mA ,VF:0.35V ,PD:100mW ,SOD-723

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DSS40LED02

Schottky Diodes ,DSS40LED02 ,VR:40V ,IO:120mA ,VF:1V ,PD:100mW ,WBFBP-02C

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B5817WS

Schottky Diodes ,B5817WS ,VR:20V ,IO:1000mA ,VF:0.75V ,PD:200mW ,SOD-323

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SD101CW

Schottky Diodes ,SD101CW ,VR:40V ,- ,VF:0.9V ,PD:400mW ,SOD-123

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DS520-30EAA02

Schottky Diodes ,DS520-30EAA02 ,VR:30V ,IO:100mA ,VF:0.46V ,PD:100mW , MLDFN0.6*0.3-2L-A

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MA729

Schottky Diodes ,MA729 ,VR:30V ,IO:200mA ,VF:0.55V ,PD:200mW ,SOD-323

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RB521S-30

Schottky Diodes ,RB521S-30 ,VR:30V ,IO:200mA ,VF:0.5V ,PD:150mW ,SOD-523

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Product Recommendation Maker Dynamics Applications

Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

Introduction to SiC Silicon Carbide MOSFET Devices SiC devices are a new type of silicon-based MOSFET, especially SiC power devices with higher switching speed and wider output frequency. SiC power chips are mainly composed of MOSFETs and PN junctions.

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

Reverse Recovery Current and Electrical Test Item Vgs of Silicon Carbide (SiC) MOSFET The electrical testing item Vgs of SiC MOSFET mainly refers to the Gate Source Voltage. Reverse Recovery Current (Irr) refers to the current flowing through a diode during the reverse recovery process.

Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

Product number：	DK-K15930V00000270203CJ
Manufacturer Product Number：	BAT42WS
Manufacturer ：	CJ
Series ：	CJ-Schottky Diodes
Product Type ：	Schottky Diodes
Voltage(VR) ：	30V
Forward Voltage(VF) ：	0.65V
Power dissipation(Pd）：	200mW
Packge ：	SOD-323
Description：	Schottky Diodes ,BAT42WS ,VR:30V ,- ,VF:0.65V ,PD:200mW ,SOD-323

BAT42WS,CJ,Schottky Diodes

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