BAT54SDW_CJ_Schottky Diodes_30V_200mA_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Schottky Diodes
Product Type	Schottky Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-03-18

Online Inquiry

Product Recommendation Maker Dynamics Applications

SD103AWS

Schottky Diodes ,SD103AWS ,VR:40V ,- ,VF:0.6V ,PD:200mW ,SOD-323

$0.000000 More
RB160M-30

Schottky Diodes ,RB160M-30 ,VR:30V ,IO:1000mA ,VF:0.48V ,PD:450mW ,SOD-123

$0.000000 More
BAT54V

Schottky Diodes ,BAT54V ,VR:30V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-563

$0.000000 More
BAS70W-04

Schottky Diodes ,BAS70W-04 ,VR:70V ,IO:70mA ,VF:1V ,PD:200mW ,SOT-323

$0.000000 More
DS54LED02

Schottky Diodes ,DS54LED02 ,VR:30V ,IO:100mA ,VF:1V ,PD:200mW ,WBFBP-02C

$0.000000 More
BAT54AT

Schottky Diodes ,BAT54AT ,VR:30V ,IO:200mA ,VF:1V ,PD:50mW ,SOT-523

$0.000000 More
RB491D

Schottky Diodes ,RB491D ,VR:20V ,- ,VF:0.47V ,PD:200mW ,SOT-23

$0.000000 More
MBR0540

Schottky Diodes ,MBR0540 ,VR:40V ,IO:500mA ,VF:0.55V ,PD:410mW ,SOD-123

$0.000000 More
BAS40T

Schottky Diodes ,BAS40T ,VR:40V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-523

$0.000000 More
RB731XN

Schottky Diodes ,RB731XN ,VR:40V ,IO:30mA ,VF:0.37V ,PD:200mW ,SOT-363

$0.000000 More
BAS40-06

Schottky Diodes ,BAS40-06 ,VR:40V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-23

$0.000000 More
BAS40-04T

Schottky Diodes ,BAS40-04T ,VR:40V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-523

$0.000000 More
RB521S-30

Schottky Diodes ,RB521S-30 ,VR:30V ,IO:200mA ,VF:0.5V ,PD:150mW ,SOD-523

$0.000000 More
BAT54CW

Schottky Diodes ,BAT54CW ,VR:30V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-323

$0.000000 More
RB480V

Schottky Diodes ,RB480V ,VR:40V ,IO:100mA ,VF:0.6V ,PD:150mW ,SOT-553

$0.000000 More
RB520G-30

Schottky Diodes ,RB520G-30 ,VR:30V ,IO:100mA ,VF:0.45V ,PD:100mW ,SOD-723

$0.000000 More
B0540WS

Schottky Diodes ,B0540WS ,VR:40V ,IO:500mA ,VF:0.62V ,PD:200mW ,SOD-323

$0.018513 More
BAS40-04

Schottky Diodes ,BAS40-04 ,VR:40V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-23

$0.000000 More
BAS40W-06

Schottky Diodes ,BAS40W-06 ,VR:40V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-323

$0.000000 More
MBRX0540

Schottky Diodes ,MBRX0540 ,VR:40V ,IO:500mA ,VF:0.55V ,PD:250mW ,SOD-323

$0.000000 More

Product Recommendation Maker Dynamics Applications

Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

Calculation method and formula for MOS transistor losses The losses of MOS transistors can be estimated by calculating their current losses and power losses. Current loss refers to the loss caused by the passage of current inside a MOS transistor, which is due to the resistance loss between electrons and the silicon substrate when passing through the MOS transistor. This loss can be calculated using the following formula:

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Product number：	DK-K17630V0A200260209CJ
Manufacturer Product Number：	BAT54SDW
Manufacturer ：	CJ
Series ：	CJ-Schottky Diodes
Product Type ：	Schottky Diodes
Voltage(VR) ：	30V
Current (IO) ：	200mA
Forward Voltage(VF) ：	1V
Power dissipation(Pd）：	200mW
Packge ：	SOT-363
Description：	Schottky Diodes ,BAT54SDW ,VR:30V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-363

BAT54SDW,CJ,Schottky Diodes

BAT54SDW

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

BAT54SDW,CJ,Schottky Diodes

BAT54SDW

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications