CMPSH-3C_CJ_Schottky Diodes_30V_100mA_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Schottky Diodes
Product Type	Schottky Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-01-08

Online Inquiry

Product Recommendation Maker Dynamics Applications

MA729

Schottky Diodes ,MA729 ,VR:30V ,IO:200mA ,VF:0.55V ,PD:200mW ,SOD-323

$0.000000 More
BAS70DW-05

Schottky Diodes ,BAS70DW-05 ,VR:70V ,IO:70mA ,VF:1V ,PD:200mW ,SOT-363

$0.000000 More
SD107WS

Schottky Diodes ,SD107WS ,VR:30V ,- ,VF:0.8V ,PD:250mW ,SOD-323

$0.000000 More
DSS40LED02

Schottky Diodes ,DSS40LED02 ,VR:40V ,IO:120mA ,VF:1V ,PD:100mW ,WBFBP-02C

$0.000000 More
DK400LED02

Schottky Diodes ,DK400LED02 ,VR:80V ,IO:100mA ,VF:1.2V ,PD:100mW ,WBFBP-02C

$0.000000 More
RB491D

Schottky Diodes ,RB491D ,VR:20V ,- ,VF:0.47V ,PD:200mW ,SOT-23

$0.000000 More
BAT54X

Schottky Diodes ,BAT54X ,VR:30V ,IO:200mA ,VF:1V ,PD:150mW ,SOD-523

$0.000000 More
SD101CW

Schottky Diodes ,SD101CW ,VR:40V ,- ,VF:0.9V ,PD:400mW ,SOD-123

$0.000000 More
BAT54T

Schottky Diodes ,BAT54T ,VR:30V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-523

$0.000000 More
RB480V

Schottky Diodes ,RB480V ,VR:40V ,IO:100mA ,VF:0.6V ,PD:150mW ,SOT-553

$0.000000 More
BAS40V

Schottky Diodes ,BAS40V ,VR:40V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-563

$0.000000 More
MBRX0540

Schottky Diodes ,MBRX0540 ,VR:40V ,IO:500mA ,VF:0.55V ,PD:250mW ,SOD-323

$0.000000 More
RB400D

Schottky Diodes ,RB400D ,VR:40V ,IO:500mA ,VF:0.5V ,PD:250mW ,SOT-23

$0.000000 More
RB425D

Schottky Diodes ,RB425D ,VR:40V ,IO:100mA ,VF:0.55V ,PD:250mW ,SOT-23

$0.000000 More
SD103AWS

Schottky Diodes ,SD103AWS ,VR:40V ,- ,VF:0.6V ,PD:200mW ,SOD-323

$0.000000 More
CMPSH-3A

Schottky Diodes ,CMPSH-3A ,VR:30V ,IO:100mA ,VF:1V ,PD:350mW ,SOT-23

$0.000000 More
BAS70T

Schottky Diodes ,BAS70T ,VR:70V ,IO:70mA ,VF:1V ,PD:150mW ,SOT-523

$0.000000 More
SD101BW

Schottky Diodes ,SD101BW ,VR:50V ,- ,VF:0.95V ,PD:400mW ,SOD-123

$0.000000 More
DS520-30EAA02

Schottky Diodes ,DS520-30EAA02 ,VR:30V ,IO:100mA ,VF:0.46V ,PD:100mW , MLDFN0.6*0.3-2L-A

$0.000000 More
BAT54WS

Schottky Diodes ,BAT54WS ,VR:30V ,IO:100mA ,VF:1V ,PD:200mW ,SOD-323

$0.000000 More

Product Recommendation Maker Dynamics Applications

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

What are the differences between gallium nitride (GaN) and silicon carbide (SiC)? Gallium nitride (GaN) and silicon carbide (SiC) power transistors, two types of compound semiconductor devices, have emerged as solutions. These devices compete with long-life silicon power lateral diffusion metal oxide semiconductor (LDMOS) MOSFETs and super junction MOSFETs. GaN and SiC devices are similar in some aspects, but there are also significant differences.

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

SiC MOSFET module is a power semiconductor device made of a new material, silicon carbide (SiC), which outperforms mainstream silicon (Si) IGBT and MOSFET devices in high-speed switching performance and high-temperature environments. In industrial equipment applications that require higher rated voltage and larger current capacity, SiC MOSFET modules can meet the application needs, including inverters, converters, and photovoltaic inverters for rail cars, achieving low loss and miniaturization of the system.

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

Product number：	DK-K19730V0A100260602CJ
Manufacturer Product Number：	CMPSH-3C
Manufacturer ：	CJ
Series ：	CJ-Schottky Diodes
Product Type ：	Schottky Diodes
Voltage(VR) ：	30V
Current (IO) ：	100mA
Forward Voltage(VF) ：	1V
Power dissipation(Pd）：	350mW
Packge ：	SOT-23
Description：	Schottky Diodes ,CMPSH-3C ,VR:30V ,IO:100mA ,VF:1V ,PD:350mW ,SOT-23

CMPSH-3C,CJ,Schottky Diodes

CMPSH-3C

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

CMPSH-3C,CJ,Schottky Diodes

CMPSH-3C

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications