DS715NND03_CJ_Schottky Diodes_30V_30mA_Parameters_ Price_ Spot inventory_ Series Category

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Schottky Diodes
Product Type	Schottky Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2024-12-24

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BAT54TW

Schottky Diodes ,BAT54TW ,VR:30V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-363

$0.000000 More
BAR43S

Schottky Diodes ,BAR43S ,VR:30V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-23

$0.000000 More
RB520CS-30

Schottky Diodes ,RB520CS-30 ,VR:30V ,IO:100mA ,VF:0.6V ,PD:100mW ,SOD-923

$0.000000 More
RB461F

Schottky Diodes ,RB461F ,VR:20V ,IO:700mA ,VF:0.49V ,PD:150mW ,SOT-323

$0.000000 More
BAT43W

Schottky Diodes ,BAT43W ,VR:30V ,- ,VF:0.45V ,PD:200mW ,SOD-123

$0.000000 More
1SS404

Schottky Diodes ,1SS404 ,VR:20V ,IO:300mA ,VF:0.45V ,PD:200mW ,SOD-323

$0.000000 More
BAS70T

Schottky Diodes ,BAS70T ,VR:70V ,IO:70mA ,VF:1V ,PD:150mW ,SOT-523

$0.000000 More
BAS70-05

Schottky Diodes ,BAS70-05 ,VR:70V ,IO:70mA ,VF:1V ,PD:200mW ,SOT-23

$0.000000 More
BAT46W

Schottky Diodes ,BAT46W ,VR:100V ,IO:150mA ,VF:1V ,PD:500mW ,SOD-123

$0.000000 More
BAT54S

Schottky Diodes ,BAT54S ,VR:30V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-23

$0.000000 More
BAS40

Schottky Diodes ,BAS40 ,VR:40V ,IO:200mA ,VF:1V ,PD:225mW ,SOT-23

$0.000000 More
SD101CW

Schottky Diodes ,SD101CW ,VR:40V ,- ,VF:0.9V ,PD:400mW ,SOD-123

$0.000000 More
BAR43

Schottky Diodes ,BAR43 ,VR:30V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-23

$0.000000 More
BAT54AW

Schottky Diodes ,BAT54AW ,VR:30V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-323

$0.000000 More
DS54NND03

Schottky Diodes ,DS54NND03 ,VR:30V ,IO:200mA ,VF:1V ,PD:150mW ,WBFBP-03B

$0.000000 More
BAS40-05T

Schottky Diodes ,BAS40-05T ,VR:40V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-523

$0.000000 More
MBR0530

Schottky Diodes ,MBR0530 ,VR:30V ,IO:500mA ,VF:0.55V ,PD:410mW ,SOD-123

$0.000000 More
SS120

Schottky Diodes ,SS120 ,VR:200V ,IO:1000mA ,VF:0.9V ,- ,SMA

$0.011880 More
SD103ATW

Schottky Diodes ,SD103ATW ,VR:40V ,IO:175mA ,VF:0.5V ,PD:200mW ,SOT-363

$0.000000 More
SS115

Schottky Diodes ,SS115 ,VR:150V ,IO:1000mA ,VF:0.9V ,- ,SMA

$0.000000 More

Product Recommendation Maker Dynamics Applications

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Silicon carbide (SiC) diodes are diodes made from silicon carbide as raw material. Silicon carbide diode, claimed to have zero reverse recovery time, is a dedicated boost diode for high-efficiency PFC boost circuits.

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

Product number：	DK-K20730V0A030310115CJ
Manufacturer Product Number：	DS715NND03
Manufacturer ：	CJ
Series ：	CJ-Schottky Diodes
Product Type ：	Schottky Diodes
Voltage(VR) ：	30V
Current (IO) ：	30mA
Forward Voltage(VF) ：	0.37V
Power dissipation(Pd）：	150mW
Packge ：	WBFBP-03B(1.2×1.2×0.5)
Description：	Schottky Diodes ,DS715NND03 ,VR:30V ,IO:30mA ,VF:0.37V ,PD:150mW ,WBFBP-03B

DS715NND03,CJ,Schottky Diodes

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