RB425D_CJ_Schottky Diodes_40V_100mA_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Schottky Diodes
Product Type	Schottky Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-06-01

Online Inquiry

Product Recommendation Maker Dynamics Applications

RB520G-30

Schottky Diodes ,RB520G-30 ,VR:30V ,IO:100mA ,VF:0.45V ,PD:100mW ,SOD-723

$0.000000 More
MBR0540

Schottky Diodes ,MBR0540 ,VR:40V ,IO:500mA ,VF:0.55V ,PD:410mW ,SOD-123

$0.000000 More
BAT54X

Schottky Diodes ,BAT54X ,VR:30V ,IO:200mA ,VF:1V ,PD:150mW ,SOD-523

$0.000000 More
BAS70-05T

Schottky Diodes ,BAS70-05T ,VR:70V ,IO:70mA ,VF:1V ,PD:150mW ,SOT-523

$0.000000 More
BAS40

Schottky Diodes ,BAS40 ,VR:40V ,IO:200mA ,VF:1V ,PD:225mW ,SOT-23

$0.000000 More
BAT54SDW

Schottky Diodes ,BAT54SDW ,VR:30V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-363

$0.000000 More
BAT64-04

Schottky Diodes ,BAT64-04 ,VR:40V ,IO:250mA ,VF:0.75V ,PD:250mW ,SOT-23

$0.000000 More
RB715W

Schottky Diodes ,RB715W ,VR:40V ,IO:30mA ,VF:0.37V ,PD:150mW ,SOT-523

$0.000000 More
RB751S-40

Schottky Diodes ,RB751S-40 ,VR:40V ,IO:30mA ,VF:0.37V ,PD:150mW ,SOD-523

$0.000000 More
BAS70

Schottky Diodes ,BAS70 ,VR:70V ,IO:70mA ,VF:1V ,PD:200mW ,SOT-23

$0.000000 More
MBR0530

Schottky Diodes ,MBR0530 ,VR:30V ,IO:500mA ,VF:0.55V ,PD:410mW ,SOD-123

$0.000000 More
BAS70W

Schottky Diodes ,BAS70W ,VR:70V ,IO:70mA ,VF:1V ,PD:200mW ,SOT-323

$0.000000 More
RB550V-30

Schottky Diodes ,RB550V-30 ,VR:30V ,IO:1000mA ,VF:0.52V ,PD:200mW ,SOD-323

$0.000000 More
BAS70-04

Schottky Diodes ,BAS70-04 ,VR:70V ,IO:70mA ,VF:1V ,PD:200mW ,SOT-23

$0.000000 More
B0530W

Schottky Diodes ,B0530W ,VR:30V ,IO:500mA ,VF:0.43V ,PD:410mW ,SOD-123

$0.000000 More
BAT54S

Schottky Diodes ,BAT54S ,VR:30V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-23

$0.000000 More
BAT54CT

Schottky Diodes ,BAT54CT ,VR:30V ,IO:200mA ,VF:1V ,PD:150mW ,SOT-523

$0.000000 More
B5818WS

Schottky Diodes ,B5818WS ,VR:30V ,IO:1000mA ,VF:0.875V ,PD:200mW ,SOD-323

$0.000000 More
BAT54W

Schottky Diodes ,BAT54W ,VR:30V ,IO:200mA ,VF:1V ,PD:200mW ,SOT-323

$0.000000 More
BAT64X

Schottky Diodes ,BAT64X ,VR:40V ,IO:250mA ,VF:0.75V ,PD:150mW ,SOD-523

$0.000000 More

Product Recommendation Maker Dynamics Applications

What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

What are the measures for surge suppression? The reasons for generating surges are multifaceted, and surges are a type of spike pulse with high rising speed and short duration. Overvoltage in the power grid, switch ignition, reverse voltage, static electricity, and motor/power supply noise are all factors that cause surges. And surge protectors provide a simple, economical, and reliable protection method for power surge protection of electronic devices.

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

The Development Trend of High Voltage SiC MOSFET The research on high-voltage SiC MOSFETs is gradually deepening, mainly focusing on the design, preparation, and detection of high-voltage SiC MOSFETs. In the past two years, Sic Mosfet has broken through the peak tunneling voltage of 2600V, with crystal surface insulation characteristics as high as 200MV • cm-1, and static performance reaching 500A/1700V for a single chip in a half bridge topology. It can also support constant current and constant voltage regulator operation. In addition, there are SiC Mosfets designed for solid-state dye solar energy to meet the needs of these applications.

Calculation method and formula for MOS transistor losses The losses of MOS transistors can be estimated by calculating their current losses and power losses. Current loss refers to the loss caused by the passage of current inside a MOS transistor, which is due to the resistance loss between electrons and the silicon substrate when passing through the MOS transistor. This loss can be calculated using the following formula:

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

Product number：	DK-K22940V0A100110502CJ
Manufacturer Product Number：	RB425D
Manufacturer ：	CJ
Series ：	CJ-Schottky Diodes
Product Type ：	Schottky Diodes
Voltage(VR) ：	40V
Current (IO) ：	100mA
Forward Voltage(VF) ：	0.55V
Power dissipation(Pd）：	250mW
Packge ：	SOT-23
Description：	Schottky Diodes ,RB425D ,VR:40V ,IO:100mA ,VF:0.55V ,PD:250mW ,SOT-23

RB425D,CJ,Schottky Diodes

RB425D

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

RB425D,CJ,Schottky Diodes

RB425D

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications