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SD101AWS,CJ,Schottky Diodes

SD101AWS

Schottky Diodes ,SD101AWS ,VR:60V ,- ,VF:1V ,PD:200mW ,SOD-323

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The image is for reference only, please refer to the drawing for details

Product number：	DK-K25960V00000260203CJ
Manufacturer Product Number：	SD101AWS
Manufacturer ：	CJ
Series ：	CJ-Schottky Diodes
Product Type ：	Schottky Diodes
Voltage(VR) ：	60V
Forward Voltage(VF) ：	1V
Power dissipation(Pd）：	200mW
Packge ：	SOD-123
Description：	Schottky Diodes ,SD101AWS ,VR:60V ,- ,VF:1V ,PD:200mW ,SOD-323

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Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Schottky Diodes
Product Type	Schottky Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

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Lead time： Estimated delivery date 2026-08-03

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The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

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What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

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Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

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