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SS16,JD,Schottky Diodes

SS16

Schottky Diodes ,SS16 ,VR:60V ,IO:1000mA ,VF:0.7V ,- ,SMA

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The image is for reference only, please refer to the drawing for details

Data Sheet： JDSS12-SS120 SMA.pdf

Product number：	DK-K27660V01A0019AA17JD
Manufacturer Product Number：	SS16
Manufacturer ：	JD
Series ：	JD-Schottky Diodes
Product Type ：	Schottky Diodes
Voltage(VR) ：	60V
Current (IO) ：	1000mA
Forward Voltage(VF) ：	0.7V
Packge ：	SMA/DO-214AC
Description：	Schottky Diodes ,SS16 ,VR:60V ,IO:1000mA ,VF:0.7V ,- ,SMA

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	JD
Product Series	JD-Schottky Diodes
Product Type	Schottky Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File

File Type	File Name
Data Sheet	JDSS12-SS120 SMA.pdf

Lead time： Estimated delivery date 2025-05-05

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Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

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Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

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