1N4148WS_JD_Switching Diodes_100V_300mA_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	JD
Product Series	JD-Switching Diodes
Product Type	Switching Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-01-10

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T-1N4148WB

Switching Diodes ,T-1N4148WB ,VR:100V ,IO:150mA ,PD:400mW ,VF:1.25V ,SOD-323W

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1N4148WT

Switching Diodes ,1N4148WT ,75V ,150mA ,150mW ,SOD523

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CD4148WTP

Switching Diodes ,CD4148WTP ,VR:75V ,IO:100mA ,PD:200mW ,VF:1V ,0603

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1N4148W

Switching Diodes ,1N4148W ,VR:75V ,IO:150mA ,PD:350mW ,VF:1.25V ,SOD-123

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BAV99T

Switching Diodes ,BAV99T ,VR:85V ,- ,PD:150mW ,VF:1V ,SOT-523

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BAS16

Switching Diodes ,BAS16 ,VR:75V ,IO:150mA ,PD:225mW ,VF:1.25V ,SOT-23

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MMBD4148T

Switching Diodes ,MMBD4148T ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

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UMN1N

Switching Diodes ,UMN1N ,VR:80V ,IO:25mA ,PD:150mW ,VF:0.9V ,SOT-353

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BAS19W

Switching Diodes ,BAS19W ,VR:100V ,IO:200mA ,PD:200mW ,VF:1.25V ,SOT-323

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MC2838

Switching Diodes ,MC2838 ,VR:50V ,IO:300mA ,PD:150mW ,VF:1.2V ,SOT-23

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BAV21W

Switching Diodes ,BAV21W ,VR:250V ,IO:200mA ,PD:250mW ,VF:1.25V ,SOD-123

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1SS400G

Switching Diodes ,1SS400G ,VR:80V ,IO:100mA ,PD:100mW ,VF:1.2V ,SOD-723

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MMBD4448HTS

Switching Diodes ,MMBD4448HTS ,VR:80V ,IO:250mA ,PD:150mW ,VF:1.25V ,SOT-523

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DAP202U

Switching Diodes ,DAP202U ,VR:80V ,IO:100mA ,PD:200mW ,VF:1.2V ,SOT-323

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MMBD1504A

Switching Diodes ,MMBD1504A ,VR:200V ,IO:200mA ,PD:350mW ,VF:1.5V ,SOT-23

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1SS400

Switching Diodes ,1SS400 ,VR:80V ,IO:100mA ,PD:150mW ,VF:1.2V ,SOD-523

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DK4148TTD03

Switching Diodes ,DK4148TTD03 ,VR:75V ,IO:150mA ,PD:150mW ,VF:1.25V ,WBFBP-03A(1.6×1.6×0.5)

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DA227

Switching Diodes ,DA227 ,VR:80V ,- ,PD:150mW ,VF:1.2V ,SOT-353

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BAV199

Switching Diodes ,BAV199 ,VR:70V ,IO:215mA ,PD:225mW ,VF:1.25V ,SOT-23

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BAV16W

Switching Diodes ,BAV16W ,VR:75V ,IO:150mA ,PD:400mW ,VF:1.25V ,SOD-123

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What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

Silicon carbide (SiC) diodes are diodes made from silicon carbide as raw material. Silicon carbide diode, claimed to have zero reverse recovery time, is a dedicated boost diode for high-efficiency PFC boost circuits.

Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Product number：	DS-SDS002100VA300070203JD
Manufacturer Product Number：	1N4148WS
Manufacturer ：	JD
Series ：	JD-Switching Diodes
Product Type ：	Switching Diodes
Reverse Voltag (VRM) ：	100V
Output Current(IO) ：	300mA
Power Dissipation (Pd) ：	400mW
Forward voltage (VF) ：	1.25V
Package ：	SOD-323
Description：	Switching Diodes ,1N4148WS ,VR:100V ,IO:300mA ,PD:400mW ,VF:1.25V ,SOD-323,T4

1N4148WS,JD,Switching Diodes

1N4148WS

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1N4148WS,JD,Switching Diodes

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