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1N4448WT,CJ,Switching Diodes

1N4448WT

Switching Diodes ,1N4448WT ,VR:100V ,IO:125mA ,PD:150mW ,VF:1.25V ,SOD-523

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Product number：	DS-SDS006100VA125010201CJ
Manufacturer Product Number：	1N4448WT
Manufacturer ：	CJ
Series ：	CJ-Switching Diodes
Product Type ：	Switching Diodes
Reverse Voltag (VRM) ：	100V
Output Current(IO) ：	125mA
Power Dissipation (Pd) ：	150mW
Forward voltage (VF) ：	1.25V
Package ：	SOD-523
Description：	Switching Diodes ,1N4448WT ,VR:100V ,IO:125mA ,PD:150mW ,VF:1.25V ,SOD-523

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Switching Diodes
Product Type	Switching Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

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Lead time： Estimated delivery date 2026-07-13

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Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

Silicon carbide (SiC) diodes are diodes made from silicon carbide as raw material. Silicon carbide diode, claimed to have zero reverse recovery time, is a dedicated boost diode for high-efficiency PFC boost circuits.

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