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1SS184,CJ,Switching Diodes

1SS184

Switching Diodes ,1SS184 ,80V ,100mA ,150mW ,VF:1.2V ,SOT-23

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The image is for reference only, please refer to the drawing for details

Data Sheet： 1SS184_SOT-23

Product number：	DS-SDS00980V0A100010302CJ
Manufacturer Product Number：	1SS184
Manufacturer ：	CJ
Series ：	CJ-Switching Diodes
Product Type ：	Switching Diodes
Reverse Voltag (VRM) ：	80V
Output Current(IO) ：	100mA
Power Dissipation (Pd) ：	150mW
Forward voltage (VF) ：	1.2V
Package ：	SOT-23
Description：	Switching Diodes ,1SS184 ,80V ,100mA ,150mW ,VF:1.2V ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Switching Diodes
Product Type	Switching Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

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File

File Type	File Name
Data Sheet	1SS184_SOT-23

Lead time： Estimated delivery date 2026-10-05

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Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

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Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

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What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

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