HNST WELCOME！ 0755-23173910

English |中文

{{searchSelectTypeText}}

Search

Alloy resistance walter fuse Precision resistor SMD fuse current diverter ever ohms

Cart {{cartCount}}

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

1SS193,CJ,Switching Diodes

1SS193

Switching Diodes ,1SS193 ,VR:80V ,IO:100mA ,PD:150mW ,VF:1.2V ,SOT-23

✖

The image is for reference only, please refer to the drawing for details

Product number：	DS-SDS01280V0A100010302CJ
Manufacturer Product Number：	1SS193
Manufacturer ：	CJ
Series ：	CJ-Switching Diodes
Product Type ：	Switching Diodes
Reverse Voltag (VRM) ：	80V
Output Current(IO) ：	100mA
Power Dissipation (Pd) ：	150mW
Forward voltage (VF) ：	1.2V
Package ：	SOT-23
Description：	Switching Diodes ,1SS193 ,VR:80V ,IO:100mA ,PD:150mW ,VF:1.2V ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Switching Diodes
Product Type	Switching Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

1SS181

Switching Diodes ,1SS181 ,VR:80V ,IO:100mA ,PD:150mW ,VF:1.2V ,SOT-23

$0.000000 More
1SS184

Switching Diodes ,1SS184 ,80V ,100mA ,150mW ,VF:1.2V ,SOT-23

$0.000000 More
1SS190

Switching Diodes ,1SS190 ,VR:80V ,IO:100mA ,PD:150mW ,VF:1.2V ,SOT-23

$0.000000 More
1SS196

Switching Diodes ,1SS196 ,VR:80V ,IO:100mA ,PD:150mW ,VF:1.2V ,SOT-23

$0.000000 More
1SS226

Switching Diodes ,1SS226 ,VR:80V ,IO:100mA ,PD:150mW ,VF:1.2V ,SOT-23

$0.000000 More

File

File Type	File Name

Lead time： Estimated delivery date 2026-09-15

Online Inquiry

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

Wide application of silicon carbide (SiC) MOSFET in new energy charging piles Silicon carbide power devices cover series such as 650V/2A-100A, 1200V/2A-90A, 1700V/5A-80A, etc. The products have been put into mass production and can fully benchmark the advanced quality and level of international brand peers. We have successively launched full current voltage level silicon carbide Schottky diodes and silicon carbide MOSFET series products that have passed industrial and automotive reliability tests, with performance reaching the international advanced level. They are applied in fields such as solar inverters, new energy electric vehicles and charging piles, smart grids, high-frequency welding, rail transportation, industrial control special power supplies, and national defense and military industries.

Product Recommendation Maker Dynamics Applications

Product number： {{currentProduct.code}}

Product information： {{currentProduct.descCn}}

Order quantity： {{currentProduct.num}}

Cart （{{myCartItems.length}}Item）

Total amount：

{{isCn?'￥':'$'}}{{cartProductTotal}}