1SS400_CJ_Switching Diodes_80V_100mA_Parameters_ Price_ Spot inventory_ Series Category

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Switching Diodes
Product Type	Switching Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Attribute Name

Attribute Value

Manufacturer

Product Series

CJ-Switching Diodes

Product Type

Switching Diodes

EU RoHS

Compliant(2011/65/EU)

EU REACH

Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	1SS400_SOD-523

File Type

File Name

Data Sheet

1SS400_SOD-523

Lead time： Estimated delivery date 2025-05-02

Quantity

Unit Price

$0.047502

$0.039585

100

$0.031668

300

$0.023751

Quantity

Unit Price

1000

$0.014250

3000

$0.012667

8000

$0.010292

Online Inquiry

* Order quantity ：

MPQ：8000

MOQ： 8000

Product Recommendation Maker Dynamics Applications

1N4448X

Switching Diodes ,1N4448X ,VR:75V ,IO:250mA ,PD:150mW ,VF:1V ,SOD-523

$0.000000 More
MMBD1501A

Switching Diodes ,MMBD1501A ,VR:200V ,IO:200mA ,PD:350mW ,VF:1.5V ,SOT-23

$0.000000 More
BAS16T

Switching Diodes ,BAS16T ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

$0.000000 More
MMBD4148ST

Switching Diodes ,MMBD4148ST ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

$0.000000 More
BAV70T

Switching Diodes ,BAV70T ,VR:85V ,- ,PD:150mW ,VF:1.25V ,SOT-523

$0.000000 More
1N4448W

Switching Diodes ,1N4448W ,VR:75V ,IO:250mA ,PD:150mW ,VF:1.25V ,SOD-123

$0.000000 More
BAS516

Switching Diodes ,BAS516 ,VR:75V ,IO:250mA ,PD:200mW ,VF:1.25V ,SOD-523

$0.000000 More

Product Recommendation Maker Dynamics Applications

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

What are the differences between gallium nitride (GaN) and silicon carbide (SiC)? Gallium nitride (GaN) and silicon carbide (SiC) power transistors, two types of compound semiconductor devices, have emerged as solutions. These devices compete with long-life silicon power lateral diffusion metal oxide semiconductor (LDMOS) MOSFETs and super junction MOSFETs. GaN and SiC devices are similar in some aspects, but there are also significant differences.

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

Calculation method and formula for MOS transistor losses The losses of MOS transistors can be estimated by calculating their current losses and power losses. Current loss refers to the loss caused by the passage of current inside a MOS transistor, which is due to the resistance loss between electrons and the silicon substrate when passing through the MOS transistor. This loss can be calculated using the following formula:

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

Why is the development of high-voltage SiC MOSFET devices slow High voltage SiC MOSFET devices have many advantages, such as low on resistance, high temperature performance, and high-frequency characteristics, and therefore have broad prospects in some applications, such as electric vehicles, power electronic converters, and solar inverters. However, the development of these devices has been relatively slow, possibly due to the following reasons:

Product number：	DS-SDS01880V0A100010301CJ
Manufacturer Product Number：	1SS400
Manufacturer ：	CJ
Series ：	CJ-Switching Diodes
Product Type ：	Switching Diodes
Reverse Voltag (VRM) ：	80V
Output Current(IO) ：	100mA
Power Dissipation (Pd) ：	150mW
Forward voltage (VF) ：	1.2V
Package ：	SOD-523
Description：	Switching Diodes ,1SS400 ,VR:80V ,IO:100mA ,PD:150mW ,VF:1.2V ,SOD-523

1SS400,CJ,Switching Diodes

1SS400

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

1SS400,CJ,Switching Diodes

1SS400

File

Related Series