HNST WELCOME！ 0755-23173910

English /中文

Search

fuse Alloy resistance ever ohms walter SMD fuse current diverter Precision resistor

Cart 0

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

BAS16V,CJ,Switching Diodes

BAS16V

Switching Diodes ,BAS16V ,VR:75V ,IO:200mA ,PD:150mW ,VF:1.25V ,SOT-563

✖

The image is for reference only, please refer to the drawing for details

Product number：	DS-SDS02675V0A200010309CJ
Manufacturer Product Number：	BAS16V
Manufacturer ：	CJ
Series ：	CJ-Switching Diodes
Product Type ：	Switching Diodes
Reverse Voltag (VRM) ：	75V
Output Current(IO) ：	200mA
Power Dissipation (Pd) ：	150mW
Forward voltage (VF) ：	1.25V
Package ：	SOT-563
Description：	Switching Diodes ,BAS16V ,VR:75V ,IO:200mA ,PD:150mW ,VF:1.25V ,SOT-563

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Switching Diodes
Product Type	Switching Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File

File Type	File Name

Lead time： Estimated delivery date 2025-05-05

Product Recommendation Maker Dynamics Applications

BAV756DW

Switching Diodes ,BAV756DW ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOT-363

$0.000000 More
DAP202U

Switching Diodes ,DAP202U ,VR:80V ,IO:100mA ,PD:200mW ,VF:1.2V ,SOT-323

$0.000000 More
MMBD4148W

Switching Diodes ,MMBD4148W ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOT-323

$0.000000 More
MC2836

Switching Diodes ,MC2836 ,VR:50V ,IO:300mA ,PD:150mW ,VF:1.2V ,SOT-23

$0.000000 More
BAS16T

Switching Diodes ,BAS16T ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

$0.000000 More
BAV74

Switching Diodes ,BAV74 ,VR:50V ,IO:200mA ,PD:225mW ,VF:1V ,SOT-23

$0.000000 More
BAL99

Switching Diodes ,BAL99 ,VR:70V ,IO:100mA ,PD:225mW ,VF:1.25V ,SOT-23

$0.000000 More

Product Recommendation Maker Dynamics Applications

What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

Introduction to SiC Silicon Carbide MOSFET Devices SiC devices are a new type of silicon-based MOSFET, especially SiC power devices with higher switching speed and wider output frequency. SiC power chips are mainly composed of MOSFETs and PN junctions.

Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

Why is the development of high-voltage SiC MOSFET devices slow High voltage SiC MOSFET devices have many advantages, such as low on resistance, high temperature performance, and high-frequency characteristics, and therefore have broad prospects in some applications, such as electric vehicles, power electronic converters, and solar inverters. However, the development of these devices has been relatively slow, possibly due to the following reasons:

Calculation method and formula for MOS transistor losses The losses of MOS transistors can be estimated by calculating their current losses and power losses. Current loss refers to the loss caused by the passage of current inside a MOS transistor, which is due to the resistance loss between electrons and the silicon substrate when passing through the MOS transistor. This loss can be calculated using the following formula:

What are the measures for surge suppression? The reasons for generating surges are multifaceted, and surges are a type of spike pulse with high rising speed and short duration. Overvoltage in the power grid, switch ignition, reverse voltage, static electricity, and motor/power supply noise are all factors that cause surges. And surge protectors provide a simple, economical, and reliable protection method for power surge protection of electronic devices.

Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

Product Recommendation Maker Dynamics Applications