BAS21_CJ_Switching Diodes_250V_200mA_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Switching Diodes
Product Type	Switching Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	BAS21_SOT-23

Lead time： Estimated delivery date 2026-03-10

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Switching Diodes ,BAS20 ,VR:150V ,IO:200mA ,PD:250mW ,VF:1.25V ,SOT-23

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Switching Diodes ,MMBD4148CA ,VR:100V ,IO:200mA ,PD:350mW ,VF:1V ,SOT-23

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CMSD2004S

Switching Diodes ,CMSD2004S ,VR:240V ,IO:200mA ,PD:250mW ,VF:1V ,SOT-23

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Switching Diodes ,BAV21WS ,VR:250V ,IO:200mA ,PD:200mW ,VF:1.25V ,SOD-323

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1SS370

Switching Diodes ,1SS370 ,VR:200V ,IO:100mA ,PD:100mW ,VF:1.2V ,SOT-323

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MC2836

Switching Diodes ,MC2836 ,VR:50V ,IO:300mA ,PD:150mW ,VF:1.2V ,SOT-23

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BAS20W

Switching Diodes ,BAS20W ,VR:150V ,IO:200mA ,PD:200mW ,VF:1.25V ,SOT-323

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BAV70DW

Switching Diodes ,BAV70DW ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOT-363

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Switching Diodes ,BAV16W ,VR:75V ,IO:150mA ,PD:400mW ,VF:1.25V ,SOD-123

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Switching Diodes ,MMBD4148CT ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

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1N4448X

Switching Diodes ,1N4448X ,VR:75V ,IO:250mA ,PD:150mW ,VF:1V ,SOD-523

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Switching Diodes ,MMBD4448HSDW ,VR:80V ,IO:250mA ,PD:200mW ,VF:1.25V ,SOT-363

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DK21LLD03

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MMBD914

Switching Diodes ,MMBD914 ,VR:75V ,IO:200mA ,PD:225mW ,VF:1.25V ,SOT-23

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MMBD4148CC

Switching Diodes ,MMBD4148CC ,VR:100V ,IO:200mA ,PD:350mW ,VF:1V ,SOT-23

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Product Recommendation Maker Dynamics Applications

SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

Why is the development of high-voltage SiC MOSFET devices slow High voltage SiC MOSFET devices have many advantages, such as low on resistance, high temperature performance, and high-frequency characteristics, and therefore have broad prospects in some applications, such as electric vehicles, power electronic converters, and solar inverters. However, the development of these devices has been relatively slow, possibly due to the following reasons:

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

What are the measures for surge suppression? The reasons for generating surges are multifaceted, and surges are a type of spike pulse with high rising speed and short duration. Overvoltage in the power grid, switch ignition, reverse voltage, static electricity, and motor/power supply noise are all factors that cause surges. And surge protectors provide a simple, economical, and reliable protection method for power surge protection of electronic devices.

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

Product number：	DS-SDS034250VA200040202CJ
Manufacturer Product Number：	BAS21
Manufacturer ：	CJ
Series ：	CJ-Switching Diodes
Product Type ：	Switching Diodes
Reverse Voltag (VRM) ：	250V
Output Current(IO) ：	200mA
Power Dissipation (Pd) ：	225mW
Forward voltage (VF) ：	1.25V
Package ：	SOT-23
Description：	Switching Diodes ,BAS21 ,VR:250V ,IO:200mA ,PD:225mW ,VF:1.25V ,SOT-23

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