BAW56_CJ_Switching Diodes_70V_200mA_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Switching Diodes
Product Type	Switching Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	BAW56_SOT-23

Lead time： Estimated delivery date 2026-09-15

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Switching Diodes ,DA227 ,VR:80V ,- ,PD:150mW ,VF:1.2V ,SOT-353

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Switching Diodes ,BAV19W ,VR:100V ,IO:200mA ,PD:250mW ,VF:1.25V ,SOD-123

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Switching Diodes ,DAP202 ,VR:80V ,IO:100mA ,PD:200mW ,VF:1.2V ,SOT-23

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Switching Diodes ,MC2836 ,VR:50V ,IO:300mA ,PD:150mW ,VF:1.2V ,SOT-23

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Switching Diodes ,MMBD3004S ,VR:350V ,IO:225mA ,PD:350mW ,VF:1.25V ,SOT-23

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DK16LLD03

Switching Diodes ,DK16LLD03 ,VR:75V ,IO:150mA ,PD:100mW ,VF:1.25V ,WBFBP-03D(1.0×1.0×0.5)

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BAV74

Switching Diodes ,BAV74 ,VR:50V ,IO:200mA ,PD:225mW ,VF:1V ,SOT-23

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1SS193

Switching Diodes ,1SS193 ,VR:80V ,IO:100mA ,PD:150mW ,VF:1.2V ,SOT-23

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DA204U

Switching Diodes ,DA204U ,VR:20V ,IO:100mA ,PD:200mW ,VF:1V ,SOT-323

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BAS21S

Switching Diodes ,BAS21S ,VR:250V ,IO:200mA ,PD:225mW ,VF:1.25V ,SOT-23

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MMBD3004A

Switching Diodes ,MMBD3004A ,VR:350V ,IO:225mA ,PD:350mW ,VF:1.25V ,SOT-23

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BAW56W

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MMBD4448HAQW

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BAV99

Switching Diodes ,BAV99 ,VR:70V ,IO:215mA ,PD:225mW ,VF:1.25V ,SOT-23

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DK21LLD03

Switching Diodes ,DK21LLD03 ,VR:200V ,IO:200mA ,PD:100mW ,VF:1.25V ,WBFBP-03D(1.0×1.0×0.5)

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BAV16W

Switching Diodes ,BAV16W ,VR:75V ,IO:150mA ,PD:400mW ,VF:1.25V ,SOD-123

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MMBD4448HSDW

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BAS21C

Switching Diodes ,BAS21C ,VR:250V ,IO:200mA ,PD:225mW ,VF:1.25V ,SOT-23

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DK70LLD03

Switching Diodes ,DK70LLD03 ,VR:85V ,IO:75mA ,PD:100mW ,VF:1.25V ,WBFBP-03D

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CMSD2004S

Switching Diodes ,CMSD2004S ,VR:240V ,IO:200mA ,PD:250mW ,VF:1V ,SOT-23

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Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

The Development Trend of High Voltage SiC MOSFET The research on high-voltage SiC MOSFETs is gradually deepening, mainly focusing on the design, preparation, and detection of high-voltage SiC MOSFETs. In the past two years, Sic Mosfet has broken through the peak tunneling voltage of 2600V, with crystal surface insulation characteristics as high as 200MV • cm-1, and static performance reaching 500A/1700V for a single chip in a half bridge topology. It can also support constant current and constant voltage regulator operation. In addition, there are SiC Mosfets designed for solid-state dye solar energy to meet the needs of these applications.

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

Product number：	DS-SDS06570V0A200040202CJ
Manufacturer Product Number：	BAW56
Manufacturer ：	CJ
Series ：	CJ-Switching Diodes
Product Type ：	Switching Diodes
Reverse Voltag (VRM) ：	70V
Output Current(IO) ：	200mA
Power Dissipation (Pd) ：	225mW
Forward voltage (VF) ：	1.25V
Package ：	SOT-23
Description：	Switching Diodes ,BAW56 ,VR:70V ,IO:200mA ,PD:225mW ,VF:1.25V ,SOT-23

BAW56,CJ,Switching Diodes

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BAW56,CJ,Switching Diodes

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