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BAW56W,CJ,Switching Diodes

BAW56W

Switching Diodes ,BAW56W ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOT-323

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The image is for reference only, please refer to the drawing for details

Data Sheet： BAW56W_SOT-323

Product number：	DS-SDS06975V0A150020207CJ
Manufacturer Product Number：	BAW56W
Manufacturer ：	CJ
Series ：	CJ-Switching Diodes
Product Type ：	Switching Diodes
Reverse Voltag (VRM) ：	75V
Output Current(IO) ：	150mA
Power Dissipation (Pd) ：	200mW
Forward voltage (VF) ：	1.25V
Package ：	SOT-323
Description：	Switching Diodes ,BAW56W ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOT-323

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Switching Diodes
Product Type	Switching Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

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File

File Type	File Name
Data Sheet	BAW56W_SOT-323

Lead time： Estimated delivery date 2025-12-15

Quantity

Unit Price

5

$0.077448

30

$0.064540

100

$0.051632

300

$0.038724

Quantity

Unit Price

1000

$0.023235

3000

$0.020653

8000

$0.016781

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MPQ：3000

MOQ： 3000

MOQ：5

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Product Recommendation Maker Dynamics Applications

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Circuit symbols for silicon carbide (SIC) MOSFETs The circuit symbol of silicon carbide (SiC) MOSFET is similar to that of traditional silicon MOSFET, except that some special markings are added to the symbol to indicate its characteristics.

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Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

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Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

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