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CMSD2004S,CJ,Switching Diodes

CMSD2004S

Switching Diodes ,CMSD2004S ,VR:240V ,IO:200mA ,PD:250mW ,VF:1V ,SOT-23

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The image is for reference only, please refer to the drawing for details

Product number：	DS-SDS070240VA200050602CJ
Manufacturer Product Number：	CMSD2004S
Manufacturer ：	CJ
Series ：	CJ-Switching Diodes
Product Type ：	Switching Diodes
Reverse Voltag (VRM) ：	240V
Output Current(IO) ：	200mA
Power Dissipation (Pd) ：	250mW
Forward voltage (VF) ：	1V
Package ：	SOT-23
Description：	Switching Diodes ,CMSD2004S ,VR:240V ,IO:200mA ,PD:250mW ,VF:1V ,SOT-23

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Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Switching Diodes
Product Type	Switching Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

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Lead time： Estimated delivery date 2026-03-30

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Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

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Analysis of Silicon Carbide (SiC) Technology Barriers: What are the Silicon Carbide Technology Barriers Groove type silicon carbide power devices have greater manufacturing difficulty. According to the different device structures, silicon carbide power devices can be mainly divided into planar devices and trench devices. Flat silicon carbide power devices have good unit consistency, simple manufacturing process, but are prone to JFET effect and have high parasitic capacitance and on state resistance. Compared to planar devices, groove type silicon carbide power devices have lower unit consistency and more complex manufacturing processes. However, the groove structure is beneficial for increasing device unit density, reducing the occurrence of JFET effect, and solving the problem of low channel mobility. It has excellent performance such as low on resistance, low parasitic capacitance, and low switching energy consumption, and has significant cost and performance advantages. It has become the mainstream direction of silicon carbide power device development.

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