DK16LLD03_CJ_Switching Diodes_75V_150mA_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Switching Diodes
Product Type	Switching Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-08-03

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UMN1N

Switching Diodes ,UMN1N ,VR:80V ,IO:25mA ,PD:150mW ,VF:0.9V ,SOT-353

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BAV20W

Switching Diodes ,BAV20W ,VR:150V ,IO:200mA ,PD:250mW ,VF:1.25V ,SOD-123

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BAS21T

Switching Diodes ,BAS21T ,VR:250V ,IO:200mA ,PD:150mW ,VF:1.25V ,SOT-523

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BAV19WS

Switching Diodes ,BAV19WS ,VR:100V ,IO:200mA ,PD:200mW ,VF:1.25V ,SOD-323

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BAV21WS

Switching Diodes ,BAV21WS ,VR:250V ,IO:200mA ,PD:200mW ,VF:1.25V ,SOD-323

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MMBD4448

Switching Diodes ,MMBD4448 ,VR:75V ,IO:250mA ,PD:350mW ,VF:1.25V ,SOT-23

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DAN222

Switching Diodes ,DAN222 ,VR:80V ,IO:100mA ,PD:150mW ,VF:1.2V ,SOT-523

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MMBD4448HSDW

Switching Diodes ,MMBD4448HSDW ,VR:80V ,IO:250mA ,PD:200mW ,VF:1.25V ,SOT-363

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DK914LLD03

Switching Diodes ,DK914LLD03 ,VR:100V ,IO:300mA ,PD:100mW ,VF:1.25V ,WBFBP-03D

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BAS21A

Switching Diodes ,BAS21A ,VR:250V ,IO:200mA ,PD:225mW ,VF:1.25V ,SOT-23

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BAS16T

Switching Diodes ,BAS16T ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

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1SS400CS

Switching Diodes ,1SS400CS ,VR:80V ,IO:100mA ,PD:100mW ,VF:1.2V ,SOD-923

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1SS226

Switching Diodes ,1SS226 ,VR:80V ,IO:100mA ,PD:150mW ,VF:1.2V ,SOT-23

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MMBD7000

Switching Diodes ,MMBD7000 ,VR:100V ,IO:200mA ,PD:225mW ,VF:1.1V ,SOT-23

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1N4448W

Switching Diodes ,1N4448W ,VR:75V ,IO:250mA ,PD:150mW ,VF:1.25V ,SOD-123

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1SS400

Switching Diodes ,1SS400 ,VR:80V ,IO:100mA ,PD:150mW ,VF:1.2V ,SOD-523

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DAN217U

Switching Diodes ,DAN217U ,VR:80V ,IO:100mA ,PD:200mW ,VF:1.2V ,SOT-323

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DAP222

Switching Diodes ,DAP222 ,VR:80V ,IO:100mA ,PD:150mW ,VF:1.2V ,SOT-523

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MMBD4148AT

Switching Diodes ,MMBD4148AT ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

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BAV99

Switching Diodes ,BAV99 ,VR:70V ,IO:215mA ,PD:225mW ,VF:1.25V ,SOT-23

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Why is the development of high-voltage SiC MOSFET devices slow High voltage SiC MOSFET devices have many advantages, such as low on resistance, high temperature performance, and high-frequency characteristics, and therefore have broad prospects in some applications, such as electric vehicles, power electronic converters, and solar inverters. However, the development of these devices has been relatively slow, possibly due to the following reasons:

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

Introduction to SiC Silicon Carbide MOSFET Devices SiC devices are a new type of silicon-based MOSFET, especially SiC power devices with higher switching speed and wider output frequency. SiC power chips are mainly composed of MOSFETs and PN junctions.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

What are the measures for surge suppression? The reasons for generating surges are multifaceted, and surges are a type of spike pulse with high rising speed and short duration. Overvoltage in the power grid, switch ignition, reverse voltage, static electricity, and motor/power supply noise are all factors that cause surges. And surge protectors provide a simple, economical, and reliable protection method for power surge protection of electronic devices.

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

Product number：	DS-SDS08575V0A150030216CJ
Manufacturer Product Number：	DK16LLD03
Manufacturer ：	CJ
Series ：	CJ-Switching Diodes
Product Type ：	Switching Diodes
Reverse Voltag (VRM) ：	75V
Output Current(IO) ：	150mA
Power Dissipation (Pd) ：	100mW
Forward voltage (VF) ：	1.25V
Package ：	WBFBP-03A(1.6×1.6×0.5)
Description：	Switching Diodes ,DK16LLD03 ,VR:75V ,IO:150mA ,PD:100mW ,VF:1.25V ,WBFBP-03D(1.0×1.0×0.5)

DK16LLD03,CJ,Switching Diodes

DK16LLD03

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DK16LLD03,CJ,Switching Diodes

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