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DK4148TTD03,CJ,Switching Diodes

DK4148TTD03

Switching Diodes ,DK4148TTD03 ,VR:75V ,IO:150mA ,PD:150mW ,VF:1.25V ,WBFBP-03A(1.6×1.6×0.5)

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The image is for reference only, please refer to the drawing for details

Product number：	DS-SDS09075V0A150010214CJ
Manufacturer Product Number：	DK4148TTD03
Manufacturer ：	CJ
Series ：	CJ-Switching Diodes
Product Type ：	Switching Diodes
Reverse Voltag (VRM) ：	75V
Output Current(IO) ：	150mA
Power Dissipation (Pd) ：	150mW
Forward voltage (VF) ：	1.25V
Package ：	DFNWB2*2-6L
Description：	Switching Diodes ,DK4148TTD03 ,VR:75V ,IO:150mA ,PD:150mW ,VF:1.25V ,WBFBP-03A(1.6×1.6×0.5)

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Switching Diodes
Product Type	Switching Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

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Lead time： Estimated delivery date 2026-07-13

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Product Recommendation Maker Dynamics Applications

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SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

Silicon carbide (SiC) diodes are diodes made from silicon carbide as raw material. Silicon carbide diode, claimed to have zero reverse recovery time, is a dedicated boost diode for high-efficiency PFC boost circuits.

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

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