DK4448LLD03_CJ_Switching Diodes_80V_250mA_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Switching Diodes
Product Type	Switching Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-08-23

Online Inquiry

Product Recommendation Maker Dynamics Applications

MC2838

Switching Diodes ,MC2838 ,VR:50V ,IO:300mA ,PD:150mW ,VF:1.2V ,SOT-23

$0.000000 More
BAW56

Switching Diodes ,BAW56 ,VR:70V ,IO:200mA ,PD:225mW ,VF:1.25V ,SOT-23

$0.000000 More
MMBD4448HTC

Switching Diodes ,MMBD4448HTC ,VR:80V ,IO:250mA ,PD:150mW ,VF:1.25V ,SOT-523

$0.000000 More
MMBD1501A

Switching Diodes ,MMBD1501A ,VR:200V ,IO:200mA ,PD:350mW ,VF:1.5V ,SOT-23

$0.000000 More
BAS16T

Switching Diodes ,BAS16T ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

$0.000000 More
BAS20W

Switching Diodes ,BAS20W ,VR:150V ,IO:200mA ,PD:200mW ,VF:1.25V ,SOT-323

$0.000000 More
1SS400CS

Switching Diodes ,1SS400CS ,VR:80V ,IO:100mA ,PD:100mW ,VF:1.2V ,SOD-923

$0.000000 More
1SS355

Switching Diodes ,1SS355 ,VR:80V ,IO:100mA ,PD:200mW ,VF:1.2V ,SOD-323

$0.000000 More
DK21LLD03

Switching Diodes ,DK21LLD03 ,VR:200V ,IO:200mA ,PD:100mW ,VF:1.25V ,WBFBP-03D(1.0×1.0×0.5)

$0.000000 More
BAV20W

Switching Diodes ,BAV20W ,VR:150V ,IO:200mA ,PD:250mW ,VF:1.25V ,SOD-123

$0.000000 More
BAS516

Switching Diodes ,BAS516 ,VR:75V ,IO:250mA ,PD:200mW ,VF:1.25V ,SOD-523

$0.000000 More
MMBD3004C

Switching Diodes ,MMBD3004C ,VR:350V ,IO:225mA ,PD:350mW ,VF:1.25V ,SOT-23

$0.000000 More
MMBD4448HAQW

Switching Diodes ,MMBD4448HAQW ,VR:80V ,IO:250mA ,PD:200mW ,VF:1.25V ,SOT-363

$0.000000 More
1SS226

Switching Diodes ,1SS226 ,VR:80V ,IO:100mA ,PD:150mW ,VF:1.2V ,SOT-23

$0.000000 More
DK914LLD03

Switching Diodes ,DK914LLD03 ,VR:100V ,IO:300mA ,PD:100mW ,VF:1.25V ,WBFBP-03D

$0.000000 More
BAV21W

Switching Diodes ,BAV21W ,VR:250V ,IO:200mA ,PD:250mW ,VF:1.25V ,SOD-123

$0.000000 More
BAW567DW

Switching Diodes ,BAW567DW ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOT-363

$0.000000 More
MMBD4148W

Switching Diodes ,MMBD4148W ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOT-323

$0.000000 More
DK4148LLD03

Switching Diodes ,DK4148LLD03 ,VR:75V ,IO:150mA ,PD:100mW ,VF:1.25V ,WBFBP-03D(1.0×1.0×0.5)

$0.000000 More
MMBD4448HT

Switching Diodes ,MMBD4448HT ,VR:80V ,IO:250mA ,PD:150mW ,VF:1.25V ,SOT-523

$0.000000 More

Product Recommendation Maker Dynamics Applications

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

Circuit symbols for silicon carbide (SIC) MOSFETs The circuit symbol of silicon carbide (SiC) MOSFET is similar to that of traditional silicon MOSFET, except that some special markings are added to the symbol to indicate its characteristics.

SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

Product number：	DS-SDS09280V0A250030216CJ
Manufacturer Product Number：	DK4448LLD03
Manufacturer ：	CJ
Series ：	CJ-Switching Diodes
Product Type ：	Switching Diodes
Reverse Voltag (VRM) ：	80V
Output Current(IO) ：	250mA
Power Dissipation (Pd) ：	100mW
Forward voltage (VF) ：	1.25V
Package ：	WBFBP-03A(1.6×1.6×0.5)
Description：	Switching Diodes ,DK4448LLD03 ,VR:80V ,IO:250mA ,PD:100mW ,VF:1.25V ,WBFBP-03D

DK4448LLD03,CJ,Switching Diodes

DK4448LLD03

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

DK4448LLD03,CJ,Switching Diodes

DK4448LLD03

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications