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MMBD3004C,CJ,Switching Diodes

MMBD3004C

Switching Diodes ,MMBD3004C ,VR:350V ,IO:225mA ,PD:350mW ,VF:1.25V ,SOT-23

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The image is for reference only, please refer to the drawing for details

Product number：	DS-SDS105350VA225060202CJ
Manufacturer Product Number：	MMBD3004C
Manufacturer ：	CJ
Series ：	CJ-Switching Diodes
Product Type ：	Switching Diodes
Reverse Voltag (VRM) ：	350V
Output Current(IO) ：	225mA
Power Dissipation (Pd) ：	350mW
Forward voltage (VF) ：	1.25V
Package ：	SOT-23
Description：	Switching Diodes ,MMBD3004C ,VR:350V ,IO:225mA ,PD:350mW ,VF:1.25V ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Switching Diodes
Product Type	Switching Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

MMBD3004A

Switching Diodes ,MMBD3004A ,VR:350V ,IO:225mA ,PD:350mW ,VF:1.25V ,SOT-23

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MMBD3004S

Switching Diodes ,MMBD3004S ,VR:350V ,IO:225mA ,PD:350mW ,VF:1.25V ,SOT-23

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Lead time： Estimated delivery date 2026-07-13

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Wide application of silicon carbide (SiC) MOSFET in new energy charging piles Silicon carbide power devices cover series such as 650V/2A-100A, 1200V/2A-90A, 1700V/5A-80A, etc. The products have been put into mass production and can fully benchmark the advanced quality and level of international brand peers. We have successively launched full current voltage level silicon carbide Schottky diodes and silicon carbide MOSFET series products that have passed industrial and automotive reliability tests, with performance reaching the international advanced level. They are applied in fields such as solar inverters, new energy electric vehicles and charging piles, smart grids, high-frequency welding, rail transportation, industrial control special power supplies, and national defense and military industries.

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SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

Silicon carbide (SiC) diodes are diodes made from silicon carbide as raw material. Silicon carbide diode, claimed to have zero reverse recovery time, is a dedicated boost diode for high-efficiency PFC boost circuits.

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

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