MMBD3004S_CJ_Switching Diodes_350V_225mA_Parameters_ Price_ Spot inventory_ Series Category

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Switching Diodes
Product Type	Switching Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2025-04-16

Online Inquiry

Product Recommendation Maker Dynamics Applications

BAS21

Switching Diodes ,BAS21 ,VR:250V ,IO:200mA ,PD:225mW ,VF:1.25V ,SOT-23

$0.000000 More
DKN222NND03

Switching Diodes ,DKN222NND03 ,VR:80V ,IO:100mA ,PD:150mW ,VF:1.2V ,WBFBP-03B

$0.000000 More
BAV99S

Switching Diodes ,BAV99S ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOT-363

$0.000000 More
MMBD4148W

Switching Diodes ,MMBD4148W ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOT-323

$0.000000 More
BAW56

Switching Diodes ,BAW56 ,VR:70V ,IO:200mA ,PD:225mW ,VF:1.25V ,SOT-23

$0.000000 More
1SS193

Switching Diodes ,1SS193 ,VR:80V ,IO:100mA ,PD:150mW ,VF:1.2V ,SOT-23

$0.000000 More
1N4448W

Switching Diodes ,1N4448W ,VR:75V ,IO:250mA ,PD:150mW ,VF:1.25V ,SOD-123

$0.000000 More
BAV99

Switching Diodes ,BAV99 ,VR:70V ,IO:215mA ,PD:225mW ,VF:1.25V ,SOT-23

$0.009397 More
BAS16TW

Switching Diodes ,BAS16TW ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOT-363

$0.000000 More
DKN222TTD03

Switching Diodes ,DKN222TTD03 ,VR:80V ,IO:100mA ,PD:150mW ,VF:1.2V ,WBFBP-03A

$0.000000 More
1SS400CS

Switching Diodes ,1SS400CS ,VR:80V ,IO:100mA ,PD:100mW ,VF:1.2V ,SOD-923

$0.000000 More
CD4148WSP

Switching Diodes ,CD4148WSP ,SOD-323 ,200mW ,75V ,IF:150mA ,VF:1V

$0.000000 More
1N4148W

Switching Diodes ,1N4148W ,VR:75V ,IO:150mA ,PD:350mW ,VF:1.25V ,SOD-123

$0.006041 More
DAN217U

Switching Diodes ,DAN217U ,VR:80V ,IO:100mA ,PD:200mW ,VF:1.2V ,SOT-323

$0.000000 More
MMBD4448HAQW

Switching Diodes ,MMBD4448HAQW ,VR:80V ,IO:250mA ,PD:200mW ,VF:1.25V ,SOT-363

$0.000000 More
BAV99DW

Switching Diodes ,BAV99DW ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOT-363

$0.000000 More
MMBD4448HTS

Switching Diodes ,MMBD4448HTS ,VR:80V ,IO:250mA ,PD:150mW ,VF:1.25V ,SOT-523

$0.000000 More
BAV16WS

Switching Diodes ,BAV16WS ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOD-323

$0.000000 More
1N4148WS

Switching Diodes ,1N4148WS ,VR:100V ,IO:300mA ,PD:400mW ,VF:1.25V ,SOD-323,T4

$0.000000 More
MMBD4148TW

Switching Diodes ,MMBD4148TW ,VR:75V ,- ,PD:200mW ,VF:1.25V ,SOT-363

$0.000000 More

Product Recommendation Maker Dynamics Applications

The Development Trend of High Voltage SiC MOSFET The research on high-voltage SiC MOSFETs is gradually deepening, mainly focusing on the design, preparation, and detection of high-voltage SiC MOSFETs. In the past two years, Sic Mosfet has broken through the peak tunneling voltage of 2600V, with crystal surface insulation characteristics as high as 200MV • cm-1, and static performance reaching 500A/1700V for a single chip in a half bridge topology. It can also support constant current and constant voltage regulator operation. In addition, there are SiC Mosfets designed for solid-state dye solar energy to meet the needs of these applications.

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

Introduction to SiC Silicon Carbide MOSFET Devices SiC devices are a new type of silicon-based MOSFET, especially SiC power devices with higher switching speed and wider output frequency. SiC power chips are mainly composed of MOSFETs and PN junctions.

What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

Product number：	DS-SDS106350VA225060202CJ
Manufacturer Product Number：	MMBD3004S
Manufacturer ：	CJ
Series ：	CJ-Switching Diodes
Product Type ：	Switching Diodes
Reverse Voltag (VRM) ：	350V
Output Current(IO) ：	225mA
Power Dissipation (Pd) ：	350mW
Forward voltage (VF) ：	1.25V
Package ：	SOT-23
Description：	Switching Diodes ,MMBD3004S ,VR:350V ,IO:225mA ,PD:350mW ,VF:1.25V ,SOT-23

MMBD3004S,CJ,Switching Diodes

MMBD3004S

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

MMBD3004S,CJ,Switching Diodes

MMBD3004S

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications