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MMBD4148AT,CJ,Switching Diodes

MMBD4148AT

Switching Diodes ,MMBD4148AT ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

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The image is for reference only, please refer to the drawing for details

Data Sheet： MMBD4148AT_SOT-523

Product number：	DS-SDS10975V0A000010210CJ
Manufacturer Product Number：	MMBD4148AT
Manufacturer ：	CJ
Series ：	CJ-Switching Diodes
Product Type ：	Switching Diodes
Reverse Voltag (VRM) ：	75V
Output Current(IO) ：	-
Power Dissipation (Pd) ：	150mW
Forward voltage (VF) ：	1.25V
Package ：	SOT-523
Description：	Switching Diodes ,MMBD4148AT ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Switching Diodes
Product Type	Switching Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

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File

File Type	File Name
Data Sheet	MMBD4148AT_SOT-523

Lead time： Estimated delivery date 2024-12-24

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Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

Product Recommendation Maker Dynamics Applications

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