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MMBD4148ST,CJ,Switching Diodes

MMBD4148ST

Switching Diodes ,MMBD4148ST ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

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The image is for reference only, please refer to the drawing for details

Data Sheet： MMBD4148ST_SOT-523

Product number：	DS-SDS11475V0A000010210CJ
Manufacturer Product Number：	MMBD4148ST
Manufacturer ：	CJ
Series ：	CJ-Switching Diodes
Product Type ：	Switching Diodes
Reverse Voltag (VRM) ：	75V
Power Dissipation (Pd) ：	150mW
Forward voltage (VF) ：	1.25V
Package ：	SOT-523
Description：	Switching Diodes ,MMBD4148ST ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Switching Diodes
Product Type	Switching Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

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Switching Diodes ,BAS16T ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

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MMBD4148T

Switching Diodes ,MMBD4148T ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

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MMBD4148AT

Switching Diodes ,MMBD4148AT ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

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MMBD4148CT

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File

File Type	File Name
Data Sheet	MMBD4148ST_SOT-523

Lead time： Estimated delivery date 2026-03-10

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Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

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Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

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