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MMBD4148ST,CJ,Switching Diodes

MMBD4148ST

Switching Diodes ,MMBD4148ST ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

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The image is for reference only, please refer to the drawing for details

Data Sheet： MMBD4148ST_SOT-523

Product number：	DS-SDS11475V0A000010210CJ
Manufacturer Product Number：	MMBD4148ST
Manufacturer ：	CJ
Series ：	CJ-Switching Diodes
Product Type ：	Switching Diodes
Reverse Voltag (VRM) ：	75V
Power Dissipation (Pd) ：	150mW
Forward voltage (VF) ：	1.25V
Package ：	SOT-523
Description：	Switching Diodes ,MMBD4148ST ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Switching Diodes
Product Type	Switching Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

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Switching Diodes ,BAS16T ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

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MMBD4148AT

Switching Diodes ,MMBD4148AT ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

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MMBD4148CT

Switching Diodes ,MMBD4148CT ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

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MMBD4148T

Switching Diodes ,MMBD4148T ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

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File

File Type	File Name
Data Sheet	MMBD4148ST_SOT-523

Lead time： Estimated delivery date 2026-09-15

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Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

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The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

Wide application of silicon carbide (SiC) MOSFET in new energy charging piles Silicon carbide power devices cover series such as 650V/2A-100A, 1200V/2A-90A, 1700V/5A-80A, etc. The products have been put into mass production and can fully benchmark the advanced quality and level of international brand peers. We have successively launched full current voltage level silicon carbide Schottky diodes and silicon carbide MOSFET series products that have passed industrial and automotive reliability tests, with performance reaching the international advanced level. They are applied in fields such as solar inverters, new energy electric vehicles and charging piles, smart grids, high-frequency welding, rail transportation, industrial control special power supplies, and national defense and military industries.

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