MMBD4148TW_CJ_Switching Diodes_75V__Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Switching Diodes
Product Type	Switching Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	MMBD4148TW_SOT-363

Lead time： Estimated delivery date 2026-06-01

Online Inquiry

Product Recommendation Maker Dynamics Applications

MMBD4148T

Switching Diodes ,MMBD4148T ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

$0.000000 More
DK4148NND03

Switching Diodes ,DK4148NND03 ,VR:75V ,IO:150mA ,PD:150mW ,VF:1.25V ,WBFBP-03B(1.2×1.2×0.5)

$0.000000 More
MC2836

Switching Diodes ,MC2836 ,VR:50V ,IO:300mA ,PD:150mW ,VF:1.2V ,SOT-23

$0.000000 More
BAV99BRW

Switching Diodes ,BAV99BRW ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOT-363

$0.000000 More
1SS226

Switching Diodes ,1SS226 ,VR:80V ,IO:100mA ,PD:150mW ,VF:1.2V ,SOT-23

$0.000000 More
DAP202U

Switching Diodes ,DAP202U ,VR:80V ,IO:100mA ,PD:200mW ,VF:1.2V ,SOT-323

$0.000000 More
DAN202U

Switching Diodes ,DAN202U ,VR:80V ,IO:100mA ,PD:200mW ,VF:1.2V ,SOT-323

$0.000000 More
DAN217U

Switching Diodes ,DAN217U ,VR:80V ,IO:100mA ,PD:200mW ,VF:1.2V ,SOT-323

$0.000000 More
BAV170

Switching Diodes ,BAV170 ,VR:75V ,IO:125mA ,PD:250mW ,VF:1.25V ,SOT-23

$0.000000 More
BAV20WS

Switching Diodes ,BAV20WS ,VR:150V ,IO:200mA ,PD:200mW ,VF:1.25V ,SOD-323

$0.000000 More
DK21LLD03

Switching Diodes ,DK21LLD03 ,VR:200V ,IO:200mA ,PD:100mW ,VF:1.25V ,WBFBP-03D(1.0×1.0×0.5)

$0.000000 More
MMBD4448HSDW

Switching Diodes ,MMBD4448HSDW ,VR:80V ,IO:250mA ,PD:200mW ,VF:1.25V ,SOT-363

$0.000000 More
MMBD4448V

Switching Diodes ,MMBD4448V ,VR:80V ,IO:250mA ,PD:150mW ,VF:1.25V ,SOT-563

$0.000000 More
1SS355

Switching Diodes ,1SS355 ,VR:80V ,IO:100mA ,PD:200mW ,VF:1.2V ,SOD-323

$0.000000 More
BAV99DW

Switching Diodes ,BAV99DW ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOT-363

$0.000000 More
MMBD4148CT

Switching Diodes ,MMBD4148CT ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

$0.000000 More
MMBD1505A

Switching Diodes ,MMBD1505A ,VR:200V ,IO:200mA ,PD:350mW ,VF:1.5V ,SOT-23

$0.000000 More
BAV16WS

Switching Diodes ,BAV16WS ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOD-323

$0.000000 More
MMBD7000

Switching Diodes ,MMBD7000 ,VR:100V ,IO:200mA ,PD:225mW ,VF:1.1V ,SOT-23

$0.000000 More
MMBD4148A

Switching Diodes ,MMBD4148A ,VR:100V ,IO:200mA ,PD:350mW ,VF:1V ,SOT-23

$0.000000 More

Product Recommendation Maker Dynamics Applications

The Development Trend of High Voltage SiC MOSFET The research on high-voltage SiC MOSFETs is gradually deepening, mainly focusing on the design, preparation, and detection of high-voltage SiC MOSFETs. In the past two years, Sic Mosfet has broken through the peak tunneling voltage of 2600V, with crystal surface insulation characteristics as high as 200MV • cm-1, and static performance reaching 500A/1700V for a single chip in a half bridge topology. It can also support constant current and constant voltage regulator operation. In addition, there are SiC Mosfets designed for solid-state dye solar energy to meet the needs of these applications.

Circuit symbols for silicon carbide (SIC) MOSFETs The circuit symbol of silicon carbide (SiC) MOSFET is similar to that of traditional silicon MOSFET, except that some special markings are added to the symbol to indicate its characteristics.

Introduction to SiC Silicon Carbide MOSFET Devices SiC devices are a new type of silicon-based MOSFET, especially SiC power devices with higher switching speed and wider output frequency. SiC power chips are mainly composed of MOSFETs and PN junctions.

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

Calculation method and formula for MOS transistor losses The losses of MOS transistors can be estimated by calculating their current losses and power losses. Current loss refers to the loss caused by the passage of current inside a MOS transistor, which is due to the resistance loss between electrons and the silicon substrate when passing through the MOS transistor. This loss can be calculated using the following formula:

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

Product number：	DS-SDS11675V0A000020209CJ
Manufacturer Product Number：	MMBD4148TW
Manufacturer ：	CJ
Series ：	CJ-Switching Diodes
Product Type ：	Switching Diodes
Reverse Voltag (VRM) ：	75V
Power Dissipation (Pd) ：	200mW
Forward voltage (VF) ：	1.25V
Package ：	SOT-363
Description：	Switching Diodes ,MMBD4148TW ,VR:75V ,- ,PD:200mW ,VF:1.25V ,SOT-363

MMBD4148TW,CJ,Switching Diodes

MMBD4148TW

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

MMBD4148TW,CJ,Switching Diodes

MMBD4148TW

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications