MMBD4448HTW_CJ_Switching Diodes_80V_250mA_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Switching Diodes
Product Type	Switching Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-08-03

Online Inquiry

Product Recommendation Maker Dynamics Applications

BAS21C

Switching Diodes ,BAS21C ,VR:250V ,IO:200mA ,PD:225mW ,VF:1.25V ,SOT-23

$0.000000 More
1SS400G

Switching Diodes ,1SS400G ,VR:80V ,IO:100mA ,PD:100mW ,VF:1.2V ,SOD-723

$0.012753 More
1SS226

Switching Diodes ,1SS226 ,VR:80V ,IO:100mA ,PD:150mW ,VF:1.2V ,SOT-23

$0.000000 More
CMSD2004S

Switching Diodes ,CMSD2004S ,VR:240V ,IO:200mA ,PD:250mW ,VF:1V ,SOT-23

$0.000000 More
MMBD4448V

Switching Diodes ,MMBD4448V ,VR:80V ,IO:250mA ,PD:150mW ,VF:1.25V ,SOT-563

$0.000000 More
DK21LLD03

Switching Diodes ,DK21LLD03 ,VR:200V ,IO:200mA ,PD:100mW ,VF:1.25V ,WBFBP-03D(1.0×1.0×0.5)

$0.000000 More
BAV19W

Switching Diodes ,BAV19W ,VR:100V ,IO:200mA ,PD:250mW ,VF:1.25V ,SOD-123

$0.000000 More
DA204U

Switching Diodes ,DA204U ,VR:20V ,IO:100mA ,PD:200mW ,VF:1V ,SOT-323

$0.000000 More
BAV99

Switching Diodes ,BAV99 ,VR:70V ,IO:215mA ,PD:225mW ,VF:1.25V ,SOT-23

$0.009397 More
BAV16W

Switching Diodes ,BAV16W ,VR:75V ,IO:150mA ,PD:400mW ,VF:1.25V ,SOD-123

$0.000000 More
DAN222M

Switching Diodes ,DAN222M ,VR:80V ,IO:100mA ,PD:150mW ,VF:1.2V ,SOT-723

$0.000000 More
1SS400CS

Switching Diodes ,1SS400CS ,VR:80V ,IO:100mA ,PD:100mW ,VF:1.2V ,SOD-923

$0.000000 More
1SS190

Switching Diodes ,1SS190 ,VR:80V ,IO:100mA ,PD:150mW ,VF:1.2V ,SOT-23

$0.000000 More
BAW56W

Switching Diodes ,BAW56W ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOT-323

$0.016781 More
BAV21WS

Switching Diodes ,BAV21WS ,VR:250V ,IO:200mA ,PD:200mW ,VF:1.25V ,SOD-323

$0.000000 More
DA227

Switching Diodes ,DA227 ,VR:80V ,- ,PD:150mW ,VF:1.2V ,SOT-353

$0.000000 More
BAV199DW

Switching Diodes ,BAV199DW ,VR:85V ,IO:160mA ,PD:200mW ,VF:1.25V ,SOT-363

$0.000000 More
BAW56DW

Switching Diodes ,BAW56DW ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOT-363

$0.000000 More
BAV756DW

Switching Diodes ,BAV756DW ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOT-363

$0.000000 More
DK16LLD03

Switching Diodes ,DK16LLD03 ,VR:75V ,IO:150mA ,PD:100mW ,VF:1.25V ,WBFBP-03D(1.0×1.0×0.5)

$0.000000 More

Product Recommendation Maker Dynamics Applications

Why is the development of high-voltage SiC MOSFET devices slow High voltage SiC MOSFET devices have many advantages, such as low on resistance, high temperature performance, and high-frequency characteristics, and therefore have broad prospects in some applications, such as electric vehicles, power electronic converters, and solar inverters. However, the development of these devices has been relatively slow, possibly due to the following reasons:

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

Introduction to SiC Silicon Carbide MOSFET Devices SiC devices are a new type of silicon-based MOSFET, especially SiC power devices with higher switching speed and wider output frequency. SiC power chips are mainly composed of MOSFETs and PN junctions.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

What are the measures for surge suppression? The reasons for generating surges are multifaceted, and surges are a type of spike pulse with high rising speed and short duration. Overvoltage in the power grid, switch ignition, reverse voltage, static electricity, and motor/power supply noise are all factors that cause surges. And surge protectors provide a simple, economical, and reliable protection method for power surge protection of electronic devices.

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

Product number：	DS-SDS12880V0A250020209CJ
Manufacturer Product Number：	MMBD4448HTW
Manufacturer ：	CJ
Series ：	CJ-Switching Diodes
Product Type ：	Switching Diodes
Reverse Voltag (VRM) ：	80V
Output Current(IO) ：	250mA
Power Dissipation (Pd) ：	200mW
Forward voltage (VF) ：	1.25V
Package ：	SOT-363
Description：	Switching Diodes ,MMBD4448HTW ,VR:80V ,IO:250mA ,PD:200mW ,VF:1.25V ,SOT-363

MMBD4448HTW,CJ,Switching Diodes

MMBD4448HTW

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

MMBD4448HTW,CJ,Switching Diodes

MMBD4448HTW

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications