MMBD4448W_CJ_Switching Diodes_75V_250mA_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Switching Diodes
Product Type	Switching Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-04-20

Online Inquiry

Product Recommendation Maker Dynamics Applications

BAS21T

Switching Diodes ,BAS21T ,VR:250V ,IO:200mA ,PD:150mW ,VF:1.25V ,SOT-523

$0.000000 More
DA221

Switching Diodes ,DA221 ,VR:20V ,IO:100mA ,PD:150mW ,VF:1V ,SOT-523

$0.000000 More
MMSD914

Switching Diodes ,MMSD914 ,VR:100V ,IO:200mA ,PD:400mW ,VF:1V ,SOD-123

$0.000000 More
BAV99S

Switching Diodes ,BAV99S ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOT-363

$0.000000 More
MMBD1504A

Switching Diodes ,MMBD1504A ,VR:200V ,IO:200mA ,PD:350mW ,VF:1.5V ,SOT-23

$0.000000 More
BAV19WS

Switching Diodes ,BAV19WS ,VR:100V ,IO:200mA ,PD:200mW ,VF:1.25V ,SOD-323

$0.000000 More
BAS16T

Switching Diodes ,BAS16T ,VR:75V ,- ,PD:150mW ,VF:1.25V ,SOT-523

$0.000000 More
BAV20W

Switching Diodes ,BAV20W ,VR:150V ,IO:200mA ,PD:250mW ,VF:1.25V ,SOD-123

$0.000000 More
BAS16X

Switching Diodes ,BAS16X ,VR:75V ,IO:200mA ,PD:150mW ,VF:1.25V ,SOD-523

$0.000000 More
1SS190

Switching Diodes ,1SS190 ,VR:80V ,IO:100mA ,PD:150mW ,VF:1.2V ,SOT-23

$0.000000 More
BAV21W

Switching Diodes ,BAV21W ,VR:250V ,IO:200mA ,PD:250mW ,VF:1.25V ,SOD-123

$0.000000 More
BAW56DW

Switching Diodes ,BAW56DW ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOT-363

$0.000000 More
MMBD4448V

Switching Diodes ,MMBD4448V ,VR:80V ,IO:250mA ,PD:150mW ,VF:1.25V ,SOT-563

$0.000000 More
DAN202

Switching Diodes ,DAN202 ,VR:80V ,IO:100mA ,PD:250mW ,VF:1.2V ,SOT-23

$0.000000 More
BAV74

Switching Diodes ,BAV74 ,VR:50V ,IO:200mA ,PD:225mW ,VF:1V ,SOT-23

$0.000000 More
MMBD4448HADW

Switching Diodes ,MMBD4448HADW ,VR:80V ,IO:250mA ,PD:200mW ,VF:1.25V ,SOT-363

$0.000000 More
BAS21

Switching Diodes ,BAS21 ,VR:250V ,IO:200mA ,PD:225mW ,VF:1.25V ,SOT-23

$0.000000 More
BAV70DW

Switching Diodes ,BAV70DW ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOT-363

$0.000000 More
BAS21W

Switching Diodes ,BAS21W ,VR:250V ,IO:200mA ,PD:200mW ,VF:1.25V ,SOT-323

$0.000000 More
BAS16V

Switching Diodes ,BAS16V ,VR:75V ,IO:200mA ,PD:150mW ,VF:1.25V ,SOT-563

$0.000000 More

Product Recommendation Maker Dynamics Applications

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

Product number：	DS-SDS13075V0A250020207CJ
Manufacturer Product Number：	MMBD4448W
Manufacturer ：	CJ
Series ：	CJ-Switching Diodes
Product Type ：	Switching Diodes
Reverse Voltag (VRM) ：	75V
Output Current(IO) ：	250mA
Power Dissipation (Pd) ：	200mW
Forward voltage (VF) ：	1.25V
Package ：	SOT-323
Description：	Switching Diodes ,MMBD4448W ,VR:75V ,IO:250mA ,PD:200mW ,VF:1.25V ,SOT-323

MMBD4448W,CJ,Switching Diodes

MMBD4448W

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

MMBD4448W,CJ,Switching Diodes

MMBD4448W

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications