MMSD914_CJ_Switching Diodes_100V_200mA_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Switching Diodes
Product Type	Switching Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-05-11

Online Inquiry

Product Recommendation Maker Dynamics Applications

BAS21W

Switching Diodes ,BAS21W ,VR:250V ,IO:200mA ,PD:200mW ,VF:1.25V ,SOT-323

$0.000000 More
1SS400CS

Switching Diodes ,1SS400CS ,VR:80V ,IO:100mA ,PD:100mW ,VF:1.2V ,SOD-923

$0.000000 More
MMBD4148

Switching Diodes ,MMBD4148 ,VR:75V ,IO:150mA ,PD:350mW ,VF:1.25V ,SOT-23

$0.000000 More
MMBD4448W

Switching Diodes ,MMBD4448W ,VR:75V ,IO:250mA ,PD:200mW ,VF:1.25V ,SOT-323

$0.000000 More
BAW56DW

Switching Diodes ,BAW56DW ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOT-363

$0.000000 More
DK16LLD03

Switching Diodes ,DK16LLD03 ,VR:75V ,IO:150mA ,PD:100mW ,VF:1.25V ,WBFBP-03D(1.0×1.0×0.5)

$0.000000 More
BAV20W

Switching Diodes ,BAV20W ,VR:150V ,IO:200mA ,PD:250mW ,VF:1.25V ,SOD-123

$0.000000 More
BAV99T

Switching Diodes ,BAV99T ,VR:85V ,- ,PD:150mW ,VF:1V ,SOT-523

$0.000000 More
MMBD4448HT

Switching Diodes ,MMBD4448HT ,VR:80V ,IO:250mA ,PD:150mW ,VF:1.25V ,SOT-523

$0.000000 More
BAV99W

Switching Diodes ,BAV99W ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOT-323

$0.000000 More
1SS181

Switching Diodes ,1SS181 ,VR:80V ,IO:100mA ,PD:150mW ,VF:1.2V ,SOT-23

$0.000000 More
BAS21

Switching Diodes ,BAS21 ,VR:250V ,IO:200mA ,PD:225mW ,VF:1.25V ,SOT-23

$0.000000 More
MMBD4448HSDW

Switching Diodes ,MMBD4448HSDW ,VR:80V ,IO:250mA ,PD:200mW ,VF:1.25V ,SOT-363

$0.000000 More
DK4148TTD03

Switching Diodes ,DK4148TTD03 ,VR:75V ,IO:150mA ,PD:150mW ,VF:1.25V ,WBFBP-03A(1.6×1.6×0.5)

$0.000000 More
BAS16V

Switching Diodes ,BAS16V ,VR:75V ,IO:200mA ,PD:150mW ,VF:1.25V ,SOT-563

$0.000000 More
DAP202U

Switching Diodes ,DAP202U ,VR:80V ,IO:100mA ,PD:200mW ,VF:1.2V ,SOT-323

$0.000000 More
MMBD4448DW

Switching Diodes ,MMBD4448DW ,VR:75V ,IO:250mA ,PD:200mW ,VF:1.25V ,SOT-363

$0.000000 More
MMBD4448V

Switching Diodes ,MMBD4448V ,VR:80V ,IO:250mA ,PD:150mW ,VF:1.25V ,SOT-563

$0.000000 More
BAV99BRW

Switching Diodes ,BAV99BRW ,VR:75V ,IO:150mA ,PD:200mW ,VF:1.25V ,SOT-363

$0.000000 More
DK21LLD03

Switching Diodes ,DK21LLD03 ,VR:200V ,IO:200mA ,PD:100mW ,VF:1.25V ,WBFBP-03D(1.0×1.0×0.5)

$0.000000 More

Product Recommendation Maker Dynamics Applications

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

Silicon carbide MOSFET modules have significant advantages in the application of high-power power systems such as photovoltaics, wind power, electric vehicles, and rail transit. The advantages of high voltage, high frequency, and high efficiency of silicon carbide devices can break through the limitations of existing electric vehicle motor designs due to device performance, which is currently the focus of research and development in the field of electric vehicle motors at home and abroad.

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

What are the differences between gallium nitride (GaN) and silicon carbide (SiC)? Gallium nitride (GaN) and silicon carbide (SiC) power transistors, two types of compound semiconductor devices, have emerged as solutions. These devices compete with long-life silicon power lateral diffusion metal oxide semiconductor (LDMOS) MOSFETs and super junction MOSFETs. GaN and SiC devices are similar in some aspects, but there are also significant differences.

Circuit symbols for silicon carbide (SIC) MOSFETs The circuit symbol of silicon carbide (SiC) MOSFET is similar to that of traditional silicon MOSFET, except that some special markings are added to the symbol to indicate its characteristics.

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

Reverse Recovery Current and Electrical Test Item Vgs of Silicon Carbide (SiC) MOSFET The electrical testing item Vgs of SiC MOSFET mainly refers to the Gate Source Voltage. Reverse Recovery Current (Irr) refers to the current flowing through a diode during the reverse recovery process.

Product number：	DS-SDS133100VA200070604CJ
Manufacturer Product Number：	MMSD914
Manufacturer ：	CJ
Series ：	CJ-Switching Diodes
Product Type ：	Switching Diodes
Reverse Voltag (VRM) ：	100V
Output Current(IO) ：	200mA
Power Dissipation (Pd) ：	400mW
Forward voltage (VF) ：	1V
Package ：	SOD-123
Description：	Switching Diodes ,MMSD914 ,VR:100V ,IO:200mA ,PD:400mW ,VF:1V ,SOD-123

MMSD914,CJ,Switching Diodes

MMSD914

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

MMSD914,CJ,Switching Diodes

MMSD914

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications