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MM1Z6V8,JD,Zener Diodes

MM1Z6V8

Zener Diodes ,6.8V ,500mW ,VF:0.9V ,SOD123

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The image is for reference only, please refer to the drawing for details

Data Sheet： JD_MM1Z_SOD123.pdf

Product number：	DZ-MM1Z6V8010V903JD
Manufacturer Product Number：	MM1Z6V8
Manufacturer ：	JD
Series ：	JD-MM1Z2V0-75
Product Type ：	Zener Diodes
Reverse Zener Voltage(VZ) ：	6.8V
Power dissipation (PD) ：	PD:500mW
Forward Voltage(VF) ：	0.9V
Package ：	SOD-123
Description：	Zener Diodes ,6.8V ,500mW ,VF:0.9V ,SOD123

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Attribute Name	Attribute Value
Manufacturer	JD
Product Series	MM1Z2V0-75
Product Type	Zener Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)
Voltage	2V-75V
Package	SOD-123
Power	500mW

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File

File Type	File Name
Data Sheet	JD_MM1Z_SOD123.pdf

Lead time： Estimated delivery date 2026-10-08

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Product Recommendation Maker Dynamics Applications

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Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

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The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Silicon carbide (SiC) diodes are diodes made from silicon carbide as raw material. Silicon carbide diode, claimed to have zero reverse recovery time, is a dedicated boost diode for high-efficiency PFC boost circuits.

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

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