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BZT52C5V6,CJ,Zener Diodes

BZT52C5V6

Zener Diodes ,BZT52C5V6 ,5.6V ,500mW ,0.9V ,SOD123

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The image is for reference only, please refer to the drawing for details

Data Sheet： BZT52C5V1_SOD-123.pdf

Product number：	DZ-ZDZ0425V6010V903CJ
Manufacturer Product Number：	BZT52C5V6
Manufacturer ：	CJ
Series ：	CJ-BZT52
Product Type ：	Zener Diodes
Part Number ：	BZT52C5V6
Reverse Zener Voltage(VZ) ：	5.6V
Power dissipation (PD) ：	500mW
Forward Voltage(VF) ：	0.9V
Package ：	SOD-123
Description：	Zener Diodes ,BZT52C5V6 ,5.6V ,500mW ,0.9V ,SOD123

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-BZT52
Product Type	Zener Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File

File Type	File Name
Data Sheet	BZT52C5V1_SOD-123.pdf

Lead time： Estimated delivery date 2025-05-14

Quantity

Unit Price

5

$0.041168

20

$0.037210

100

$0.028501

300

$0.019792

Quantity

Unit Price

1000

$0.015042

3000

$0.010925

* Order quantity ：

MPQ：3000

MOQ： 3000

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Wide application of silicon carbide (SiC) MOSFET in new energy charging piles Silicon carbide power devices cover series such as 650V/2A-100A, 1200V/2A-90A, 1700V/5A-80A, etc. The products have been put into mass production and can fully benchmark the advanced quality and level of international brand peers. We have successively launched full current voltage level silicon carbide Schottky diodes and silicon carbide MOSFET series products that have passed industrial and automotive reliability tests, with performance reaching the international advanced level. They are applied in fields such as solar inverters, new energy electric vehicles and charging piles, smart grids, high-frequency welding, rail transportation, industrial control special power supplies, and national defense and military industries.

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What are the measures for surge suppression? The reasons for generating surges are multifaceted, and surges are a type of spike pulse with high rising speed and short duration. Overvoltage in the power grid, switch ignition, reverse voltage, static electricity, and motor/power supply noise are all factors that cause surges. And surge protectors provide a simple, economical, and reliable protection method for power surge protection of electronic devices.

Reverse Recovery Current and Electrical Test Item Vgs of Silicon Carbide (SiC) MOSFET The electrical testing item Vgs of SiC MOSFET mainly refers to the Gate Source Voltage. Reverse Recovery Current (Irr) refers to the current flowing through a diode during the reverse recovery process.

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What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

Why is the development of high-voltage SiC MOSFET devices slow High voltage SiC MOSFET devices have many advantages, such as low on resistance, high temperature performance, and high-frequency characteristics, and therefore have broad prospects in some applications, such as electric vehicles, power electronic converters, and solar inverters. However, the development of these devices has been relatively slow, possibly due to the following reasons:

Product Recommendation Maker Dynamics Applications