HNST WELCOME！ 0755-23173910

English /中文

Search

walter ever ohms Precision resistor SMD fuse fuse Alloy resistance current diverter

Cart 0

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

LM5Z6V8T1G,LRC,Zener Diodes

LM5Z6V8T1G

Zener Diodes ,LM5Z6V8T1G ,6.8V ,200mW ,0.9V ,SOD523

✖

The image is for reference only, please refer to the drawing for details

Data Sheet： LM5Z2V0T1G-Series.pdf

Product number：	DZ-ZDZ0766V8030V901LR
Manufacturer Product Number：	LM5Z6V8T1G
Manufacturer ：	LRC
Series ：	LRC-LM5Z2V0-75V
Product Type ：	Zener Diodes
Part Number ：	LM5Z6V8T1G
Reverse Zener Voltage(VZ) ：	6.8V
Power dissipation (PD) ：	200mW
Forward Voltage(VF) ：	0.9V
Package ：	SOD-523
Description：	Zener Diodes ,LM5Z6V8T1G ,6.8V ,200mW ,0.9V ,SOD523

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	LRC
Product Series	LRC-LM5Z2V0-75V
Product Type	Zener Diodes
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File

File Type	File Name
Data Sheet	LM5Z2V0T1G-Series.pdf

Lead time： Estimated delivery date 2025-06-05

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

What are the design issues of inverters during the transition from silicon to silicon carbide (SiC)? The design of silicon carbide device inverters is a complex process that requires consideration of many factors to ensure their reliability and performance. Therefore, designers need to fully understand the characteristics of silicon carbide devices and make corresponding adjustments during design to ensure that the inverter can meet the requirements of the application environment

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

Silicon carbide (SiC) diodes are diodes made from silicon carbide as raw material. Silicon carbide diode, claimed to have zero reverse recovery time, is a dedicated boost diode for high-efficiency PFC boost circuits.

Circuit symbols for silicon carbide (SIC) MOSFETs The circuit symbol of silicon carbide (SiC) MOSFET is similar to that of traditional silicon MOSFET, except that some special markings are added to the symbol to indicate its characteristics.

Calculation method and formula for MOS transistor losses The losses of MOS transistors can be estimated by calculating their current losses and power losses. Current loss refers to the loss caused by the passage of current inside a MOS transistor, which is due to the resistance loss between electrons and the silicon substrate when passing through the MOS transistor. This loss can be calculated using the following formula:

Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

What are the differences in application scenarios between single FET and MOSFET transistors? Single FET and MOSFET have a wide range of application prospects in switch circuits and power amplifiers, and the specific choice should be determined according to the specific application scenario and requirements.

Will Cascode SiC be faster than regular SiC? The Cascode SiC (silicon carbide common source common gate) structure may have faster switching speeds than ordinary SiC devices in some cases. The Cascode structure combines the characteristics of Si (silicon) MOSFET and SiC devices, and through optimized design and driving methods, it is possible to achieve lower on resistance, faster switching conversion, and lower switching losses.

Product Recommendation Maker Dynamics Applications