LM317_CJ_Reference Power Supply_TO-252-2L_LM317_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Reference Power Supply
Product Type	Reference Power Supply
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	LM317.pdf

Lead time： Estimated delivery date 2026-09-04

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LM317

Reference Power Supply LM317 PD:1600mW IO:1500mA VImax:40V TO-263-2L

$0.000000 More
CJ431B

Reference Power Supply CJ431B PD:300mW IO:100mA VImax:40V SOT-23

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LM317C

Reference Power Supply LM317C PD:1000mW IO:1500mA VImax:40V SOT-223

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LM317

Reference Power Supply LM317 PD:1500mW IO:1500mA VImax:40V TO-220-3L

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CJ431

Reference Power Supply CJ431 PD:500mW IO:100mA VImax:36V SOT-89-3L

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CD431

Reference Power Supply CD431 PD:300mW IO:100mA VImax:36V SOT-23

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CJ432

Reference Power Supply CJ432 PD:500mW IO:100mA VImax:18V TO92

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CJ431K

Reference Power Supply CJ431K PD:770mW IO:100mA VImax:36V TO92

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LM317C

Reference Power Supply LM317C PD:1500mW IO:1500mA VImax:40V TO-220-3L

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CJ432

Reference Power Supply CJ432 PD:350mW IO:100mA VImax:18V SOT-23

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CD431B

Reference Power Supply CJ431B PD:300mW IO:100mA VImax:40V SOT-23

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LM317C

Reference Power Supply LM317C PD:1250mW IO:1500mA VImax:40V TO-252-2L

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LM317

Reference Power Supply LM317 PD:1000mW IO:1500mA VImax:40V SOT-223

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CJ431

Reference Power Supply CJ431 PD:300mW IO:100mA VImax:36V SOT-23,0.5%, 431

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CJ431E-P3A-ARG

Voltage Reference ,CJ431E ,SOT-89-3L ,CJ,±0.4%

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CD431D-N3B-ARG

Reference Power Supply CD431D-N3B-ARG PD:300mW IO:100mA VImax:36V SOT-23

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CJ431

Reference Power Supply CJ431 PD:300mW IO:100mA VImax:36V SOT-23

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CJ431D-N3A-ARG

Reference Power Supply CJ431D-N3A-ARG PD:300mW IO:100mA VImax:36V SOT-23

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CJ431

Reference Power Supply CJ431 PD:770mW IO:100mA VImax:36V TO92

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CJ431K

Reference Power Supply CJ431K PD:300mW IO:100mA VImax:36V SOT-23

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What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

SiC MOSFET module is a power semiconductor device made of a new material, silicon carbide (SiC), which outperforms mainstream silicon (Si) IGBT and MOSFET devices in high-speed switching performance and high-temperature environments. In industrial equipment applications that require higher rated voltage and larger current capacity, SiC MOSFET modules can meet the application needs, including inverters, converters, and photovoltaic inverters for rail cars, achieving low loss and miniaturization of the system.

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

What are the measures for surge suppression? The reasons for generating surges are multifaceted, and surges are a type of spike pulse with high rising speed and short duration. Overvoltage in the power grid, switch ignition, reverse voltage, static electricity, and motor/power supply noise are all factors that cause surges. And surge protectors provide a simple, economical, and reliable protection method for power surge protection of electronic devices.

Product number：	IC07-LM317-TO252CJ
Manufacturer Product Number：	LM317
Manufacturer ：	CJ
Series ：	CJ-Reference Power Supply
Product Type ：	Reference Power Supply
Package ：	TO-252-2L
Part Number ：	LM317
Power dissipation(Pd）：	PD:1250mW
Average rectified output current （Io) ：	IO:1500mA(1.5A)
Voltage(VR) ：	40V
Description：	Reference Power Supply LM317 PD:1250mW IO:1500mA VImax:40V TO-252-2L

LM317,CJ,Reference Power Supply

LM317

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LM317,CJ,Reference Power Supply

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