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LM2904,CJ,Operational Amplifier

LM2904

Operational Amplifier LM2904 VS(MIN):3V VS(MAX):26V INPUT:7mV SOP8

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The image is for reference only, please refer to the drawing for details

Data Sheet： CJ_LM2904.pdf

Product number：	IC11-LM2904-SO8CJ
Manufacturer Product Number：	LM2904
Manufacturer ：	CJ
Series ：	CJ-Operational Amplifier
Product Type ：	Operational Amplifier
Package ：	SOP8
Part Number ：	LM2904
Power Dissipation (PD) ：	3V
Output current ：	26V
Voltage ：	7mV
Description：	Operational Amplifier LM2904 VS(MIN):3V VS(MAX):26V INPUT:7mV SOP8

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Operational Amplifier
Product Type	Operational Amplifier
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

File

File Type	File Name
Data Sheet	CJ_LM2904.pdf

Lead time： Estimated delivery date 2026-05-28

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Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

Introduction to SiC Silicon Carbide MOSFET Devices SiC devices are a new type of silicon-based MOSFET, especially SiC power devices with higher switching speed and wider output frequency. SiC power chips are mainly composed of MOSFETs and PN junctions.

Wide application of silicon carbide (SiC) MOSFET in new energy charging piles Silicon carbide power devices cover series such as 650V/2A-100A, 1200V/2A-90A, 1700V/5A-80A, etc. The products have been put into mass production and can fully benchmark the advanced quality and level of international brand peers. We have successively launched full current voltage level silicon carbide Schottky diodes and silicon carbide MOSFET series products that have passed industrial and automotive reliability tests, with performance reaching the international advanced level. They are applied in fields such as solar inverters, new energy electric vehicles and charging piles, smart grids, high-frequency welding, rail transportation, industrial control special power supplies, and national defense and military industries.

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What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

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