HNST WELCOME！ 0755-23173910

English |中文

{{searchSelectTypeText}}

Search

walter Precision resistor ever ohms SMD fuse current diverter fuse Alloy resistance

Cart {{cartCount}}

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

LM321,CJ,Operational Amplifier

LM321

Operational Amplifier LM321 VS(MIN):3V VS(MAX):24V INPUT:5mV SOT-23-5L

✖

The image is for reference only, please refer to the drawing for details

Data Sheet： LM321.pdf

Product number：	IC11-LM321-B93CJ
Manufacturer Product Number：	LM321
Manufacturer ：	CJ
Series ：	CJ-Operational Amplifier
Product Type ：	Operational Amplifier
Package ：	SOT-23-5L
Part Number ：	LM321
Power Dissipation (PD) ：	3V
Output current ：	24V
Voltage ：	5mV
Description：	Operational Amplifier LM321 VS(MIN):3V VS(MAX):24V INPUT:5mV SOT-23-5L

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Operational Amplifier
Product Type	Operational Amplifier
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

File

File Type	File Name
Data Sheet	LM321.pdf

Lead time： Estimated delivery date 2026-07-12

Online Inquiry

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Calculation method and formula for MOS transistor losses The losses of MOS transistors can be estimated by calculating their current losses and power losses. Current loss refers to the loss caused by the passage of current inside a MOS transistor, which is due to the resistance loss between electrons and the silicon substrate when passing through the MOS transistor. This loss can be calculated using the following formula:

Wide application of silicon carbide (SiC) MOSFET in new energy charging piles Silicon carbide power devices cover series such as 650V/2A-100A, 1200V/2A-90A, 1700V/5A-80A, etc. The products have been put into mass production and can fully benchmark the advanced quality and level of international brand peers. We have successively launched full current voltage level silicon carbide Schottky diodes and silicon carbide MOSFET series products that have passed industrial and automotive reliability tests, with performance reaching the international advanced level. They are applied in fields such as solar inverters, new energy electric vehicles and charging piles, smart grids, high-frequency welding, rail transportation, industrial control special power supplies, and national defense and military industries.

Why is the development of high-voltage SiC MOSFET devices slow High voltage SiC MOSFET devices have many advantages, such as low on resistance, high temperature performance, and high-frequency characteristics, and therefore have broad prospects in some applications, such as electric vehicles, power electronic converters, and solar inverters. However, the development of these devices has been relatively slow, possibly due to the following reasons:

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

What are the differences between gallium nitride (GaN) and silicon carbide (SiC)? Gallium nitride (GaN) and silicon carbide (SiC) power transistors, two types of compound semiconductor devices, have emerged as solutions. These devices compete with long-life silicon power lateral diffusion metal oxide semiconductor (LDMOS) MOSFETs and super junction MOSFETs. GaN and SiC devices are similar in some aspects, but there are also significant differences.

Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

Product Recommendation Maker Dynamics Applications

Product number： {{currentProduct.code}}

Product information： {{currentProduct.descCn}}

Order quantity： {{currentProduct.num}}

Cart （{{myCartItems.length}}Item）

Total amount：

{{isCn?'￥':'$'}}{{cartProductTotal}}