FF100R12RT4,INFINEON,IGBT Module

Product Recommendation Maker Dynamics Applications

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  FP15R12W1T4

  IGBT Module ,15A , ,1200V ,48*33.8*15.5mm

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  FS35R12W1T4

  IGBT Module ,35A0 , ,1200V ,48*33.8*15.5mm

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  FP25R12W2T4

  IGBT Module ,25A , ,1200V ,56.7*48*15.5mm

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  LEGM35TD120E1HZ

  IGBT Module ,35A0 , ,1200V ,48*33.8*15.5mm

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  LEGM25BE120E2HZ

  IGBT Module ,25A , ,1200V ,56.7*48*15.5mm

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  LEGM15BE120E1HZ

  IGBT Module ,15A , ,1200V ,48*33.8*15.5mm

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  LEGM100BH120L1H

  IGBT Module ,100A , ,1200V ,94*34*30.5mm

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Product Recommendation Maker Dynamics Applications

• Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

• Power module equipped with SiC MOSFET and SiC SBD Recommendation: Power modules equipped with SiC MOSFETs and SiC SBDs

• Wide application of silicon carbide (SiC) MOSFET in new energy charging piles Silicon carbide power devices cover series such as 650V/2A-100A, 1200V/2A-90A, 1700V/5A-80A, etc. The products have been put into mass production and can fully benchmark the advanced quality and level of international brand peers. We have successively launched full current voltage level silicon carbide Schottky diodes and silicon carbide MOSFET series products that have passed industrial and automotive reliability tests, with performance reaching the international advanced level. They are applied in fields such as solar inverters, new energy electric vehicles and charging piles, smart grids, high-frequency welding, rail transportation, industrial control special power supplies, and national defense and military industries.

• Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

• Can digital signals pass through isolation chips Can digital signals pass through isolation chips? The answer is yes. Digital signals can be transmitted through isolation chips. Isolation chips are mainly used to isolate signals for the purpose of electrical isolation, ground isolation, or optical isolation. Isolation chips typically consist of two parts: isolation front-end and isolation back-end.

• Will Cascode SiC be faster than regular SiC? The Cascode SiC (silicon carbide common source common gate) structure may have faster switching speeds than ordinary SiC devices in some cases. The Cascode structure combines the characteristics of Si (silicon) MOSFET and SiC devices, and through optimized design and driving methods, it is possible to achieve lower on resistance, faster switching conversion, and lower switching losses.

• Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

• Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

• Combination of Silicon Carbide (SiC) Power Management Solutions Silicon carbide solutions support the replacement of aircraft's pneumatic and hydraulic systems with smaller, lighter, and more efficient electrical solutions to power onboard AC generators, actuators, and auxiliary power units (APU). This type of solution can also reduce the maintenance requirements of these systems. However, the most significant contribution of SiC technology lies in its mission to electrify commercial transport vehicles, which are one of the world's largest sources of GHG emissions. With the advent of 1700V metal oxide semiconductor field-effect transistors (MOSFETs) and configurable digital gate drive technology, today's SiC solutions enable designers to generate maximum productivity with minimal energy consumption for these systems.

• 5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

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