FP15R12W1T4,INFINEON,IGBT Module

Product Recommendation Maker Dynamics Applications

• 

  FP25R12W2T4

  IGBT Module ,25A , ,1200V ,56.7*48*15.5mm

  $0.000000 More

• 

  LEGM15BE120E1HZ

  IGBT Module ,15A , ,1200V ,48*33.8*15.5mm

  $0.000000 More

• 

  FF100R12RT4

  IGBT Module ,100A , ,1200V ,94*34*30.5mm

  $0.000000 More

• 

  LEGM100BH120L1H

  IGBT Module ,100A , ,1200V ,94*34*30.5mm

  $0.000000 More

• 

  LEGM25BE120E2HZ

  IGBT Module ,25A , ,1200V ,56.7*48*15.5mm

  $0.000000 More

• 

  LEGM35TD120E1HZ

  IGBT Module ,35A0 , ,1200V ,48*33.8*15.5mm

  $0.000000 More

• 

  FS35R12W1T4

  IGBT Module ,35A0 , ,1200V ,48*33.8*15.5mm

  $0.000000 More

Product Recommendation Maker Dynamics Applications

• Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

• What are the differences in application scenarios between single FET and MOSFET transistors? Single FET and MOSFET have a wide range of application prospects in switch circuits and power amplifiers, and the specific choice should be determined according to the specific application scenario and requirements.

• Wide application of silicon carbide (SiC) MOSFET in new energy charging piles Silicon carbide power devices cover series such as 650V/2A-100A, 1200V/2A-90A, 1700V/5A-80A, etc. The products have been put into mass production and can fully benchmark the advanced quality and level of international brand peers. We have successively launched full current voltage level silicon carbide Schottky diodes and silicon carbide MOSFET series products that have passed industrial and automotive reliability tests, with performance reaching the international advanced level. They are applied in fields such as solar inverters, new energy electric vehicles and charging piles, smart grids, high-frequency welding, rail transportation, industrial control special power supplies, and national defense and military industries.

• The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

• Power module equipped with SiC MOSFET and SiC SBD Recommendation: Power modules equipped with SiC MOSFETs and SiC SBDs

• Combination of Silicon Carbide (SiC) Power Management Solutions Silicon carbide solutions support the replacement of aircraft's pneumatic and hydraulic systems with smaller, lighter, and more efficient electrical solutions to power onboard AC generators, actuators, and auxiliary power units (APU). This type of solution can also reduce the maintenance requirements of these systems. However, the most significant contribution of SiC technology lies in its mission to electrify commercial transport vehicles, which are one of the world's largest sources of GHG emissions. With the advent of 1700V metal oxide semiconductor field-effect transistors (MOSFETs) and configurable digital gate drive technology, today's SiC solutions enable designers to generate maximum productivity with minimal energy consumption for these systems.

• Reverse Recovery Current and Electrical Test Item Vgs of Silicon Carbide (SiC) MOSFET The electrical testing item Vgs of SiC MOSFET mainly refers to the Gate Source Voltage. Reverse Recovery Current (Irr) refers to the current flowing through a diode during the reverse recovery process.

• Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

• What are the design issues of inverters during the transition from silicon to silicon carbide (SiC)? The design of silicon carbide device inverters is a complex process that requires consideration of many factors to ensure their reliability and performance. Therefore, designers need to fully understand the characteristics of silicon carbide devices and make corresponding adjustments during design to ensure that the inverter can meet the requirements of the application environment

• Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

Product Recommendation Maker Dynamics Applications