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LEGM35TD120E1HZ,LEADING ENERGY,IGBT Module

LEGM35TD120E1HZ

IGBT Module ,35A0 , ,1200V ,48*33.8*15.5mm

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The image is for reference only, please refer to the drawing for details

Data Sheet： LEGM35TD120E1HZ_VER04.pdf

Product number：	IGBT-GM35A0TD1200E1L
Manufacturer Product Number：	LEGM35TD120E1HZ
Manufacturer ：	LEADING ENERGY
Series ：	LEAD1NG-IGBT
Product Type ：	IGBT Module
Continuous Collector Current(Ic) ：	35A
Collector-emitter voltage (VCES) ：	1200V
Size ：	4833.815.5mm
Description：	IGBT Module ,35A0 , ,1200V ,4833.815.5mm

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	LEADING ENERGY
Product Series	LEAD1NG-IGBT
Product Type	IGBT Module
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File

File Type	File Name
Data Sheet	LEGM35TD120E1HZ_VER04.pdf

Lead time： Estimated delivery date 2025-05-14

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5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

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